Three-dimensional memory devices and methods for forming the same

ABSTRACT

Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a gate electrode above the substrate, a blocking layer on the gate electrode, a plurality of charge trapping layers on the blocking layer, a tunneling layer on the plurality of charge trapping layers, and a plurality of channel layers on the tunneling layer. The plurality of charge trapping layers are discrete and disposed at different levels. The plurality of channel layers are discrete and disposed at different levels. Each of the channel layers corresponds to a respective one of the charge trapping layers.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is continuation of International Application No.PCT/CN2019/108891, filed on Sep. 29, 2019, entitled “THREE-DIMENSIONALMEMORY DEVICES AND METHODS FOR FORMING THE SAME,” which is herebyincorporated by reference in its entirety. This application is alsorelated to U.S. application Ser. No. 16/727,874, filed on Dec. 26, 2019,entitled “THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THESAME,” and U.S. application Ser. No. 16/727,880, filed on Dec. 26, 2019,entitled “THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THESAME,” all of which are hereby incorporated by reference in theirentireties.

BACKGROUND

Embodiments of the present disclosure relate to three-dimensional (3D)memory devices and fabrication methods thereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A 3D memory architecture can address the density limitation in planarmemory cells. The 3D memory architecture includes a memory array andperipheral devices for controlling signals to and from the memory array.

SUMMARY

Embodiments of 3D memory devices and fabrication methods thereof aredisclosed herein.

In one example, a 3D memory device includes a substrate, a gateelectrode above the substrate, a blocking layer on the gate electrode, aplurality of charge trapping layers on the blocking layer, a tunnelinglayer on the plurality of charge trapping layers, and a plurality ofchannel layers on the tunneling layer. The plurality of charge trappinglayers are discrete and disposed at different levels. The plurality ofchannel layers are discrete and disposed at different levels. Each ofthe channel layers corresponds to a respective one of the chargetrapping layers.

In another example, a 3D memory device includes a substrate, a gateelectrode above the substrate, a blocking layer on the gate electrode, aplurality of charge trapping layers on the blocking layer, a tunnelinglayer on the plurality of charge trapping layers, and a channel layer onthe tunneling layer. The plurality of charge trapping layers arediscrete and disposed at different levels.

In still another example, a method for forming a 3D memory device isdisclosed. A gate electrode having an inverted “T” shape is formed abovea substrate. A continuous blocking layer is formed on the gateelectrode. A continuous charge trapping layer is formed on the blockinglayer. A first thickness of a first part of the charge trapping layerextending laterally is greater than a second thickness of a second partof the charge trapping layer extending vertically. The second part ofthe charge trapping layer extending vertically is removed to form aplurality of discrete charge trapping layers disposed at differentlevels on the blocking layer from the first part of the charge trappinglayer extending laterally. A continuous tunneling layer is formed on thediscrete charge trapping layers. A continuous channel layer is formed onthe tunneling layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1 illustrates a cross-section of an exemplary 3D memory devicehaving a single memory deck, according to some embodiments of thepresent disclosure.

FIG. 2 illustrates a cross-section of another exemplary 3D memory devicehaving a single memory deck, according to some embodiments of thepresent disclosure.

FIG. 3 illustrates a cross-section of still another exemplary 3D memorydevice having a single memory deck, according to some embodiments of thepresent disclosure.

FIG. 4 illustrates a cross-section of yet another exemplary 3D memorydevice having a single memory deck, according to some embodiments of thepresent disclosure.

FIG. 5A illustrates a cross-section of an exemplary 3D memory devicehaving multiple memory decks, according to some embodiments of thepresent disclosure.

FIG. 5B illustrates a cross-section of another exemplary 3D memorydevice having multiple memory decks, according to some embodiments ofthe present disclosure.

FIG. 6A illustrates a cross-section of still another exemplary 3D memorydevice having multiple memory decks, according to some embodiments ofthe present disclosure.

FIG. 6B illustrates a cross-section of yet another exemplary 3D memorydevice having multiple memory decks, according to some embodiments ofthe present disclosure.

FIG. 7 illustrates a plan view of an exemplary 3D memory device havingmultiple gate lines, according to some embodiments of the presentdisclosure.

FIGS. 8A-8H illustrate an exemplary fabrication process for forming a 3Dmemory device having a single memory deck, according to some embodimentsof the present disclosure.

FIGS. 9A-9G illustrate an exemplary fabrication process for forminganother 3D memory device having a single memory deck, according to someembodiments of the present disclosure.

FIGS. 10A and 10B illustrate an exemplary fabrication process forforming a 3D memory device having multiple memory decks, according tosome embodiments of the present disclosure.

FIGS. 11A-11D illustrate an exemplary fabrication process for forminganother 3D memory device having multiple memory decks, according to someembodiments of the present disclosure.

FIG. 12 is a flowchart of an exemplary method for forming a 3D memorydevice having a single memory deck, according to some embodiments.

FIG. 13 is a flowchart of another exemplary method for forming a 3Dmemory device having a single memory deck, according to someembodiments.

FIG. 14 is a flowchart of an exemplary method for forming a 3D memorydevice having multiple memory decks, according to some embodiments.

FIG. 15 is a flowchart of another exemplary method for forming a 3Dmemory device having multiple memory decks, according to someembodiments.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend laterally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or via contacts are formed) and one ormore dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with memory cells that can be arranged vertically on alaterally-oriented substrate so that the number of memory cells can bescaled up in the vertical direction with respect to the substrate. Asused herein, the term “vertical/vertically” means nominallyperpendicular to the lateral surface of a substrate.

In some 3D NAND flash memory devices, because the charge trapping layer(e.g., a silicon nitride layer) is a continuous layer shared by multiplememory cells in the same memory string, the performance of the devicemay be degraded due to coupling effect and charge spreading/loss effect,which limits the vertical scale-up of the 3D NAND flash memory devicesby reducing the thickness of the gate-to-gate dielectric layers. Tomitigate the issue caused by the continuous charge trapping layer, thecontinuous charge trapping layer is cut off to become separate chargetrapping layers in each memory cell in some 3D NAND flash memorydevices. However, this structure increases the fabrication complexitywith due to smaller critical dimensions, thereby reducing the productionyield.

Various embodiments in accordance with the present disclosure provide 3Dmemory devices with discrete charge trapping layers at different levelsand fabrication methods thereof to mitigate the charge spreading effectwithout increasing fabrication complexity. A gate electrode having aninverted “T” shape or a double-sided staircase shape can be first formedabove a substrate, followed by the formation of a memory film havingmultiple dielectric layers, including a blocking layer, a chargetrapping layer, and a tunneling layer, on the gate electrode. Byutilizing the ununiform thickness distribution of the charge trappinglayer above the top surface of the inverted “T” or double-sidedstaircase-shaped gate electrode, multiple discrete charge trappinglayers at different levels can be formed to mitigate the spreadingeffect without increasing fabrication complexity. Similarly, multiplediscrete channel layers corresponding to the discrete charge trappinglayers or a continuous channel layer can be formed on the memory film toform one or more memory cells in a memory deck. The 3D memory devicescan be further vertically scaled-up by stacking multiple memory decks.

FIG. 1 illustrates a cross-section of an exemplary 3D memory device 100having a single memory deck, according to some embodiments of thepresent disclosure. 3D memory device 100 can include a substrate 102,which can include silicon (e.g., single crystalline silicon), silicongermanium (SiGe), gallium arsenide (GaAs), germanium (Ge), silicon oninsulator (SOI), or any other suitable materials. In some embodiments,substrate 102 is a thinned substrate (e.g., a semiconductor layer),which was thinned from a normal thickness by grinding, wet/dry etching,chemical mechanical polishing (CMP), or any combination thereof. It isnoted that x- and z-axes are included in FIG. 1 to further illustratethe spatial relationships of the components in 3D memory device 100. Thex- and y-axes are orthogonal in the x-y plane, which is parallel to thewafer surface (e.g., as shown in FIG. 7). Substrate 102 includes twolateral surfaces extending laterally in the x-y plane (i.e., in thelateral direction): a top surface on the front side of the wafer, and abottom surface on the backside opposite to the front side of the wafer.The z-axis is perpendicular to both the x- and y-axes. As used herein,whether one component (e.g., a layer or a device) is “on,” “above,” or“below” another component (e.g., a layer or a device) of a semiconductordevice (e.g., 3D memory device 100) is determined relative to thesubstrate of the semiconductor device (e.g., substrate 102) in thez-direction (the vertical direction perpendicular to the x-y plane) whenthe substrate is positioned in the lowest plane of the semiconductordevice in the z-direction. The same notion for describing the spatialrelationships is applied throughout the present disclosure.

3D memory device 100 can include a gate electrode 104 above substrate102. In some embodiments, a pad layer (not shown), such as an in-situsteam generation (ISSG) silicon oxide, is formed between substrate 102(e.g., a silicon substrate) and gate electrode 104. As shown in FIG. 1,gate electrode 104 can have an inverted “T” shape in the cross-sectionview. In some embodiments, the inverted “T” shape includes two“shoulders” and a “head” laterally between the two shoulders in thex-direction. In some embodiments, the two shoulders of the inverted “T”shape are in the same level that is below the level at which the head ofthe inverted “T” shape is. The top surface of gate electrode 104 caninclude a first part extending laterally and a second part extendingvertically. For example, the upper sides of the head and shoulders ofthe inverted “T” shape of gate electrode 104 may be nominally parallelto the lateral surface of substrate 102, while the sidewalls connectingthe head and each shoulder of the inverted “T” shape of gate electrode104 may be nominally perpendicular to the lateral surface of substrate102.

Gate electrode 104 can include conductive materials including, but notlimited to, tungsten (W), cobalt (Co), copper (Cu), aluminum (Al),polysilicon, doped silicon, silicides, or any combination thereof. Insome embodiments, gate electrode 104 includes a metal layer, such as atungsten layer. In some embodiments, gate electrode 104 includes a dopedpolysilicon layer. Polysilicon can be doped to a desired dopingconcentration with any suitable dopant to become a conductive materialthat can be used as the material of gate electrode 104. Gate electrode104 can extend laterally (e.g., in the y-direction perpendicular to boththe x- and z- axes in FIG. 1) as a word line of 3D memory device 100.

3D memory device 100 can also include a blocking layer 106 (also knownas “blocking oxide”) on gate electrode 104. In some embodiments, a gatedielectric layer (not shown) is disposed between blocking layer 106 andgate electrode 104 or is part of gate electrode 104 (e.g., as the upperportion of gate electrode 104 in contact with blocking layer 106). Forexample, the gate dielectric layer may include high dielectric constant(high-k) dielectrics including, but not limited to, aluminum oxide (A1₂O₃), hafnium oxide (HfO₂), zirconium oxide (ZnO₂), tantalum oxide(Ta₂O₅), etc. As shown in FIG. 1, blocking layer 106 is continuous anddisposed along at least the top surface of gate electrode 104, accordingto some embodiments. That is, blocking layer 106 can be a continuouslayer that covers the upper sides of the head and shoulders of theinverted “T” shape of gate electrode 104 as well as the sidewallsconnecting the head and each shoulder of the inverted “T” shape of gateelectrode 104. In some embodiments, each end of blocking layer 106 canfurther extend vertically to cover the sidewalls connecting substrate102 and each shoulder of the inverted “T” shape of gate electrode 104,i.e., completely covering gate electrode 104 in the x-direction.Blocking layer 106 can include silicon oxide, silicon oxynitride, high-kdielectrics, or any combination thereof. In some embodiments, blockinglayer 106 is a composite dielectric layer including a plurality ofsub-blocking layers, for example, a high-k dielectric layer, a firstsilicon oxide layer, a silicon oxynitride layer, and a second siliconoxide layer, in the bottom-up order.

3D memory device 100 can further include a plurality of charge trappinglayers 108 a, 108 b, and 108 c (also known as “storage nitride”) onblocking layer 106. As illustrated in FIG. 1, charge trapping layers 108a, 108 b, and 108 c on blocking layer 106 are discrete (as opposed to acontinuous layer) and disposed at different levels (i.e., havingdifferent distance from the lateral surface of substrate 102 in thevertical direction, as opposed to at the same level). In someembodiments, three discrete charge trapping layers: a first chargetrapping layer 108 a is disposed laterally between a second chargetrapping layer 108 b and a third charge trapping layer 108 c. Second andthird charge trapping layers 108 b and 108 c are disposed at the samelevel that is below the level at which first charge trapping layer 108 ais disposed, according to some embodiments. For example, each of first,second, and third charge trapping layers 108 a, 108 b, and 108 c mayextend laterally, but not vertically, i.e., being disconnected at thesidewalls of blocking layer 106. In other words, each first, second, orthird charge trapping layer 108 a, 108 b, or 108 c does not include apart that extends vertically along the sidewalls of blocking layer 106underneath, according to some embodiments. In some embodiments, firstcharge trapping layer 108 a is disposed corresponding to the head of theinverted “T” shape of gate electrode 104. For example, first chargetrapping layer 108 a may be right above or cover the head of theinverted “T” shape of gate electrode 104. In some embodiments, secondand third charge trapping layers 108 b and 108 c are disposedcorresponding to the two shoulders of the inverted “T” shape of gateelectrode 104, respectively. For example, each of second and thirdcharge trapping layers 108 b and 108 c may be right above or cover arespective shoulder of the inverted “T” shape of gate electrode 104.

Each charge trapping layers 108 a, 108 b, or 108 c can store charges,for example, electrons or holes from a semiconductor channel (e.g.,channel layers 112 a, 112 b, and 112 c in FIG. 1). The storage orremoval of charge in charge trapping layers 108 a, 108 b, and 108 c canimpact the on/off state and/or the conductance of the semiconductorchannel. Charge trapping layers 108 a, 108 b, and 108 c can includesilicon nitride, silicon oxynitride, silicon, or any combinationthereof. In some embodiments, each charge trapping layer 108 a, 108 b,or 108 c is a composite dielectric layer including a plurality ofsub-charge trapping layers, for example, a first silicon nitride layer,a first silicon oxynitride layer, a second silicon nitride layer, asecond silicon oxynitride layer, and a third silicon nitride layer, inthe bottom-up order.

3D memory device 100 can further include a tunneling layer 110 (alsoknown as “tunnel oxide”) on charge trapping layers 108 a, 108 b, and 108c. As shown in FIG. 1, tunneling layer 110 is continuous and disposedalong at least the top surfaces of charge trapping layers 108 a, 108 b,and 108 c, according to some embodiments. That is, tunneling layer 110can be a continuous layer that covers each charge trapping layer 108 a,108 b, or 108 c. In some embodiments, the part of tunneling layer 110extending vertically is in contact with the part of blocking layer 106extending vertically (e.g., the sidewalls of blocking layer 106). As aresult, tunneling layer 110 completely covers charge trapping layers 108a, 108 b, and 108 c and blocking layer 106 in the x-direction, accordingto some embodiments. Charge trapping layers 108 a, 108 b, and 108 c canbe sandwiched between two continuous layers: tunneling layer 110 andblocking layer 106 in the z-direction. Charges, for example, electronsor holes from a semiconductor channel (e.g., channel layers 112 a, 112b, and 112 c in FIG. 1) can tunnel through tunneling layer 110 to chargetrapping layers 108 a, 108 b, and 108 c. Tunneling layer 110 can includesilicon oxide, silicon oxynitride, or any combination thereof. In someembodiments, tunneling layer 110 is a composite dielectric layerincluding a plurality of sub-tunneling layers, for example, a firstsilicon oxide layer, a first silicon oxynitride layer, a second siliconoxynitride layer, a third silicon oxynitride layer, and a second siliconoxide layer, in the bottom-up order. Blocking layer 106, charge trappinglayers 108 a, 108 b, and 108 c, and tunneling layer 110 can becollectively referred to as a “memory film.” In some embodiments,blocking layer 106 includes silicon oxide, each charge trapping layer108 a, 108 b, or 108 c includes silicon nitride, tunneling layer 110includes silicon oxide, and the memory film is referred to as an “ONO”memory film for charge trapping-type of flash memory.

3D memory device 100 can further include a plurality of channel layers112 a, 112 b, and 112 c (also known as “semiconductor channel”) ontunneling layer 110. As illustrated in FIG. 1, channel layers 112 a, 112b, and 112 c on tunneling layer 110 are discrete (as opposed to acontinuous layer) and disposed at different levels (i.e., havingdifferent distance from the lateral surface of substrate 102 in thevertical direction, as opposed to at the same level). In someembodiments, three discrete channel layers: a first channel layer 112 ais disposed laterally between a second channel layer 112 b and a thirdchannel layer 112 c. Second and third channel layers 112 b and 112 c aredisposed at the same level that is below the level at which firstchannel layer 112 a is disposed, according to some embodiments. Forexample, each of first, second, and third channel layers 112 a, 112 b,and 112 c may extend laterally, but not vertically, i.e., beingdisconnected at the sidewalls of tunneling layer 110. In other words,each first, second, or third channel layer 112 a, 112 b, and 112 c doesnot include a part that extends vertically along the sidewalls oftunneling layer 110 underneath, according to some embodiments. In someembodiments, first channel layer 112 a is disposed corresponding to thehead of the inverted “T” shape of gate electrode 104. For example, firstchannel layer 112 a may be right above or cover the head of the inverted“T” shape of gate electrode 104. In some embodiments, second and thirdchannel layers 112 b and 112 c are disposed corresponding to the twoshoulders of the inverted “T” shape of gate electrode 104, respectively.For example, each of second and third channel layers 112 b and 112 c maybe right above or cover a respective shoulder of the inverted “T” shapeof gate electrode 104.

In some embodiments, each channel layer 112 a, 112 b, or 112 ccorresponds to respective charge trapping layer 108 a, 108 b, or 108 c.For example, first, second, and channel layers 112 a, 112 b, and 112 cmay correspond to (e.g., right above or cover) first, second, and thirdcharge trapping layers 108 a, 108 b, and 108 c, respectively. Eachchannel layer 112 a, 112 b, or 112 c can provide charges, for example,electrons or holes, to respective first, second, or third chargetrapping layer 108 a, 108 b, or 108 c, tunneling through tunneling layer110. Channel layers 112 a, 112 b, and 112 c can include silicon, such asamorphous silicon, polysilicon, or single-crystal silicon. In someembodiments, each channel layer 112 a, 112 b, or 112 c includespolysilicon.

Inverted “T”-shaped gate electrode 104 in conjunction with the memoryfilm (including blocking layer 106, charge trapping layers 108 a, 108 b,and 108 c, and tunneling layer 110) and channel layers 112 a, 112 b, and112 c disposed thereon can be referred to herein as a “memory deck,”which is the basic unit for scaling up the storage capacity as describedbelow in detail. The single memory deck of 3D memory device 100 includestwo levels 101 and 103 corresponding to the head and shoulders of theinverted “T” shape of gate electrode 104, respectively, according tosome embodiments. As described above, first charge trapping and channellayer 108 a and 112 a can be disposed at first level 101, and secondcharge trapping and channel layers 108 b and 112 b and third chargetrapping and channel layers 108 c and 112 c can be disposed at secondlevel 103 below first level 101.

In some embodiments, by separating both the charge trapping layer andchannel layer into three discrete layers at different levels (e.g., atfirst and second levels 101 and 103 of the memory deck) corresponding tothe head and shoulders of the inverted “T” shape of gate electrode 104,3D memory device 100 in FIG. 1 includes three memory cells: a firstmemory cell 101 a, a second memory cell 103 b, and a third memory cell103 c. In some embodiments, first memory cell 101 a is disposed at firstlevel 101, and second and third memory cells 103 b and 103 c aredisposed at second level 103 of the memory deck. For example, firstmemory cell 101 a may include part of blocking layer 106, first chargetrapping layer 108 a, part of tunneling layer 110, and first channellayer 112 a. Similarly, second memory cell 103 b may include part ofblocking layer 106, second charge trapping layer 108 b, part oftunneling layer 110, and second channel layer 112 b ; third memory cell103 c may include part of blocking layer 106, third charge trappinglayer 108 c, part of tunneling layer 110, and third channel layer 112 c.First, second, and third memory cells 101 a, 103 b, and 103 c can sharesame gate electrode 104. First, second, and third memory cells 101 a,103 b, and 103 c of 3D memory device 100 can be controlled by gateelectrode 104.

Although not shown in FIG. 1, it is understood that any other suitablecomponents may be included as part of 3D memory device 100. For example,local contacts, such as bit line contacts, word line contacts, andsource line contacts, may be included in 3D memory device 100 forpad-out, i.e., electrically connecting memory cells 101 a, 103 b, and103 c for metal routing to interconnects (e.g., middle-end-of-line(MEOL) interconnects and back-end-of-line (BEOL) interconnects). In oneexample, gate electrode 104 may be padded out using word line contactsthrough the sidewalls of the memory film. In another example, eachchannel layer 112 a, 112 b, or 112 c may be padded out using bit linecontacts from a respective top surface. In some embodiments, 3D memorydevice 100 further includes peripheral circuits, such as any suitabledigital, analog, and/or mixed-signal peripheral circuits used forfacilitating the operation of 3D memory device 100. For example, theperipheral circuits can include one or more of a page buffer, a decoder(e.g., a row decoder and a column decoder), a sense amplifier, a driver,a charge pump, a current or voltage reference, or any active or passivecomponents of the circuits (e.g., transistors, diodes, resistors, orcapacitors).

FIG. 2 illustrates a cross-section of another exemplary 3D memory device200 having a single memory deck, according to some embodiments of thepresent disclosure. 3D memory device 200 is similar to 3D memory device100 in FIG. 1 except for the channel layer. The structures, functions,and materials of the same components that have been described above withrespect to 3D memory device 100 in FIG. 1 are not repeated for ease ofdescription. Instead of having discrete channel layers (e.g., first,second, and third channel layers 112 a, 112 b, and 112 c in 3D memorydevice 100), 3D memory device 200 includes a continuous channel layer202 on tunneling layer 110. As shown in FIG. 2, channel layer 202 iscontinuous and disposed along at least the top surface of tunnelinglayer 110, according to some embodiments. That is, channel layer 202 canbe a continuous layer that covers tunneling layer 110 underneath.Channel layer 202 can provide charges, for example, electrons or holes,to each first, second, and third charge trapping layer 108 a, 108 b, or108 c, tunneling through tunneling layer 110. Channel layer 202 caninclude silicon, such as amorphous silicon, polysilicon, orsingle-crystal silicon. In some embodiments, channel layer 202 includespolysilicon.

Due to the different design of the channel layer, the single memory deckof 3D memory device 200 includes a single memory cell, as opposed tothree memory cells 101 a, 103 b, and 103 c in the single memory deck of3D memory device 100 in FIG. 1. That is, 3D memory device 200 can haveone memory cell that includes blocking layer 106, first, second, andthird charge trapping layers 108 a, 108 b, and 108 c, tunneling layer110, and channel layer 202. The memory cell of 3D memory device 200 canbe controlled by gate electrode 104.

One way to scale-up the memory cells in the 3D memory devices disclosedherein is to increase the number of levels in a single memory deck. FIG.3 illustrates a cross-section of still another exemplary 3D memorydevice 300 having a single memory deck, according to some embodiments ofthe present disclosure. Similar to 3D memory device 100 in FIG. 1, 3Dmemory device 300 is another example of a 3D memory device having asingle memory deck with multiple memory cells. Different from 3D memorydevice 100 in FIG. 1 including an inverted “T”-shaped gate electrode104, 3D memory device 300 includes a two-sided staircase-shaped gateelectrode 304. In some embodiments, the two-sided staircase shape ofgate electrode 304 includes at least five stairs at three levels atwhich at least five memory cells can be disposed. Compared with theinverted “T” shape of gate electrode 104, which has one head and twoshoulders at two levels 101 and 103 at which three memory cells 101 a,103 b, and 103 c are disposed, the number of memory cells in a singlememory deck can be increased in 3D memory device 300 in FIG. 3.

3D memory device 300 can include gate electrode 304 above a substrate302. Substrate 302 can include silicon (e.g., single crystallinesilicon), SiGe, GaA, Ge, SOI, or any other suitable materials. In someembodiments, a pad layer (not shown), such as an ISSG silicon oxide, isformed between substrate 302 (e.g., a silicon substrate) and gateelectrode 304. Gate electrode 304 can include conductive materialsincluding, but not limited to, W, Co, Cu, Al, polysilicon, dopedsilicon, silicides, or any combination thereof. In some embodiments,gate electrode 304 includes a metal layer, such as a tungsten layer. Insome embodiments, gate electrode 304 includes a doped polysilicon layer.Polysilicon can be doped to a desired doping concentration with anysuitable dopant to become a conductive material that can be used as thematerial of gate electrode 304. Gate electrode 304 can extend laterally(e.g., in the y-direction perpendicular to both the x- and z-axes inFIG. 3) as a word line of 3D memory device 300.

As shown in FIG. 3, gate electrode 304 can have a two-sided staircaseshape in the cross-section view. In some embodiments, the two-sidedstaircase shape includes at least three levels, such as five levels 301,303, 305, 307, and 309 as shown in FIG. 3. Besides the top level, whichhas one stair, each other level of the two-sided staircase shape canhave two stairs on each side, making the total number of stairs in thetwo-sided staircase shape being 2L−1, where L is the number of levels.Accordingly, the two-sided staircase shape of gate electrode 304 has atleast five stairs at three levels. In some embodiments, the two stairsat each level 303, 305, 307, or 309 are below the top stair at top level301. The stairs of the two-sided staircase shape of gate electrode 304can be symmetric in the lateral direction (e.g., the x-direction). Insome embodiments, the two stairs on the same side at adjacent levels ofthe two-sided staircase shape of gate electrode 304 are offset by anominally same distance in the vertical direction (the z-direction) anda nominally same distance in the lateral direction (e.g., thex-direction). For each two adjacent levels of the two-sided staircaseshape, the first level that is closer to substrate 302 can extendlaterally further than the second level, thereby forming two platforms(similar to the two shoulders of the inverted “T” shape of gateelectrode 104 of 3D memory device 100 in FIG. 1) where memory cells canform. The top surface of gate electrode 304 can include a first partextending laterally and a second part extending vertically. For example,the upper sides of each stair of the two-sided staircase shape of gateelectrode 304 may be nominally parallel to the lateral surface ofsubstrate 302, while the sidewalls connecting the stairs at adjacentlevels of the two-sided staircase shape of gate electrode 304 may benominally perpendicular to the lateral surface of substrate 302. Thefirst part of the top surface of gate electrode 304 extending laterallycorresponds to the platforms where memory cells can form, according tosome embodiments.

3D memory device 300 can also include a blocking layer 306 on gateelectrode 304. In some embodiments, a gate dielectric layer (not shown)is disposed between blocking layer 306 and gate electrode 304 or is partof gate electrode 304 (e.g., as the upper portion of gate electrode 304in contact with blocking layer 306). For example, the gate dielectriclayer may include high-k dielectrics including, but not limited to,Al₂O₃, HfO₂, ZnO₂, Ta₂O₅, etc. As shown in FIG. 3, blocking layer 306 iscontinuous and disposed along at least the top surface of gate electrode304, according to some embodiments. That is, blocking layer 306 can be acontinuous layer that covers the upper sides of the stairs of thetwo-sided staircase shape of gate electrode 304 as well as the sidewallsconnecting the stairs of the two-sided staircase shape of gate electrode304. In some embodiments, each end of blocking layer 306 can furtherextend vertically to cover the sidewalls connecting substrate 302 andthe stairs at the lowest level (e.g., 309), i.e., completely coveringgate electrode 304 in the x-direction. Blocking layer 306 can includesilicon oxide, silicon oxynitride, high-k dielectrics, or anycombination thereof. In some embodiments, blocking layer 306 is acomposite dielectric layer including a plurality of sub-blocking layers,for example, a high-k dielectric layer, a first silicon oxide layer, asilicon oxynitride layer, and a second silicon oxide layer, in thebottom-up order.

3D memory device 300 can further include a plurality of charge trappinglayers 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 con blocking layer 306. As illustrated in FIG. 3, charge trapping layers308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 c onblocking layer 306 are discrete (as opposed to a continuous layer) anddisposed at different levels 301, 303, 305, 307, and 309 (i.e., havingdifferent distance from the lateral surface of substrate 302 in thevertical direction, as opposed to at the same level). In someembodiments, nine discrete charge trapping layers: a top charge trappinglayer 308 a is disposed laterally between a set of left charge trappinglayer 310 c, 312 c, 314 c, and 316 c, and a set of right charge trappinglayers 310 b, 312 b, 314 b, and 316 b. Each pair of left and rightcharge trapping layers 310 b and 310 c, 312 b and 312 c, 314 b and 314b, or 316 b and 316 c are disposed at the same level that is below toplevel 301 at which top charge trapping layer 308 a is disposed,according to some embodiments. For example, each of charge trappinglayers 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 cmay extend laterally, but not vertically, i.e., being disconnected atthe sidewalls of blocking layer 306. In other words, each chargetrapping layer 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b,or 316 c does not include a part that extends vertically along thesidewalls of blocking layer 306 underneath, according to someembodiments. In some embodiments, top charge trapping layer 308 a isdisposed corresponding to the top stair at top level 301 of thetwo-sided staircase shape of gate electrode 304. For example, top chargetrapping layer 308 a may be right above or cover the top stair of thetwo-sided staircase shape of gate electrode 304. In some embodiments,left and right charge trapping layers 310 b, 310 c, 312 b, 312 c, 314 b,314 c, 316 b, and 316 c are disposed corresponding to other stairs atother levels 303, 305, 307, and 309 of the two-sided staircase shape ofgate electrode 304, respectively. For example, each of left and rightcharge trapping layers 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b,and 316 c may be right above or cover a respective stair of thetwo-sided staircase shape of gate electrode 304.

Each charge trapping layer 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314c, 316 b, or 316 c can store charges for example, electrons or holesfrom a semiconductor channel (e.g., channel layers 318 a, 320 b, 320 c,322 b, 322 c, 324 b, 324 c, 326 b, and 326 c in FIG. 3). The storage orremoval of charge in charge trapping layers 308 a, 310 b, 310 c, 312 b,312 c, 314 b, 314 c, 316 b, and 316 c can impact the on/off state and/orthe conductance of the semiconductor channel. Charge trapping layers 308a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 c caninclude silicon nitride, silicon oxynitride, silicon, or any combinationthereof. In some embodiments, each charge trapping layer 308 a, 310 b,310 c, 312 b, 312 c, 314 b, 314 c, 316 b, or 316 c is a compositedielectric layer including a plurality of sub-charge trapping layers,for example, a first silicon nitride layer, a first silicon oxynitridelayer, a second silicon nitride layer, a second silicon oxynitridelayer, and a third silicon nitride layer, in the bottom-up order. It isunderstood that although nine charge trapping layers are shown in FIG.3, it is understood that 3D memory device 300 may have different numbersof charge trapping layers in other embodiments. The number of the chargetrapping layers can correspond to the number of levels, stairs, andplatforms of the two-sided staircase shape of gate electrode 304, asdescribed above in detail. In some embodiments, 3D memory device 300includes at least five discrete charge trapping layers at three levels.

3D memory device 300 can further include a tunneling layer 317 on chargetrapping layers 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b,and 316 c. As shown in FIG. 1, tunneling layer 317 is continuous anddisposed along at least the top surfaces of charge trapping layers 308a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 c, accordingto some embodiments. That is, tunneling layer 317 can be a continuouslayer that covers each charge trapping layer 308 a, 310 b, 310 c, 312 b,312 c, 314 b, 314 c, 316 b, or 316 c. In some embodiments, the part oftunneling layer 317 extending vertically is in contact with the part ofblocking layer 306 extending vertically (e.g., the sidewalls of blockinglayer 306). As a result, tunneling layer 317 completely covers chargetrapping layers 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b,and 316 c and blocking layer 306 in the x-direction, according to someembodiments. Charge trapping layers 308 a, 310 b, 310 c, 312 b, 312 c,314 b, 314 c, 316 b, and 316 c can be sandwiched between two continuouslayers: tunneling layer 317 and blocking layer 306 in the z-direction.Charges for example, electrons or holes from a semiconductor channel(e.g., channel layers 318 a, 320 b, 320 c, 322 b, 322 c, 324 b, 324 c,326 b, and 326 c in FIG. 3) can tunnel through tunneling layer 317 tocharge trapping layers 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c,316 b, and 316 c. Tunneling layer 317 can include silicon oxide, siliconoxynitride, or any combination thereof. In some embodiments, tunnelinglayer 317 is a composite dielectric layer including a plurality ofsub-tunneling layers, for example, a first silicon oxide layer, a firstsilicon oxynitride layer, a second silicon oxynitride layer, a thirdsilicon oxynitride layer, and a second silicon oxide layer, in thebottom-up order. Blocking layer 306, charge trapping layers 308 a, 310b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 c, and tunnelinglayer 317 can be collectively referred to as a “memory film.” In someembodiments, blocking layer 306 includes silicon oxide, each chargetrapping layer 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b,or 316 c includes silicon nitride, tunneling layer 317 includes siliconoxide, and the memory film is referred to as an “ONO” memory film forcharge trapping-type of flash memory.

3D memory device 300 can further include a plurality of channel layers318 a, 320 b, 320 c, 322 b, 322 c, 324 b, 324 c, 326 b, and 326 c ontunneling layer 317. As illustrated in FIG. 3, channel layers 318 a, 320b, 320 c, 322 b, 322 c, 324 b, 324 c, 326 b, and 326 c on tunnelinglayer 317 are discrete (as opposed to a continuous layer) and disposedat different levels (i.e., having different distance from the lateralsurface of substrate 302 in the vertical direction, as opposed to at thesame level). In some embodiments, nine discrete channel layers: a topchannel layer 318 a is disposed laterally between a set of left channellayers 320 c, 322 c, 324 c, and 326 c and a set of right channel layers320 b, 322 b, 324 b, and 326 b. Each pair of left and right channellayers 320 b and 320 c, 322 b and 322 c, 324 b and 324 c, or 326 b and326 c are disposed at the same level that is below top level 301 atwhich top channel layer 318 a is disposed, according to someembodiments. For example, each of top, left, and right channel layers318 a, 320 b, 320 c, 322 b, 322 c, 324 b, 324 c, 326 b, and 326 c mayextend laterally, but not vertically, i.e., being disconnected at thesidewalls of tunneling layer 317. In other words, each top, left, andright channel layers 318 a, 320 b, 320 c, 322 b, 322 c, 324 b, 324 c,326 b, or 326 c does not include a part that extends vertically alongthe sidewalls of tunneling layer 317 underneath, according to someembodiments. In some embodiments, top channel layer 318 a is disposedcorresponding to the top stair at top level 301 of the two-sidedstaircase shape of gate electrode 304. For example, top channel layer318 a may be right above or cover the top stair of the two-sidedstaircase shape of gate electrode 304. In some embodiments, left andright channel layers 320 b, 320 c, 322 b, 322 c, 324 b, 324 c, 326 b,and 326 c are disposed corresponding to other stairs at other levels303, 305, 307, and 309 of the two-sided staircase shape of gateelectrode 304, respectively. For example, each of left and right channellayers 320 b, 320 c, 322 b, 322 c, 324 b, 324 c, 326 b, and 326 c may beright above or cover a respective stair of the two-sided staircase shapeof gate electrode 304.

In some embodiments, each channel layer 318 a, 320 b, 320 c, 322 b, 322c, 324 b, 324 c, 326 b, or 326 c corresponds to respective chargetrapping layer 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b,or 316 c. For example, top, left, and right channel layers 318 a, 320 b,320 c, 322 b, 322 c, 324 b, 324 c, 326 b, and 326 c may correspond to(e.g., right above or cover) first, left, and right charge trappinglayers 308 a, 310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316c, respectively. Each channel layer 318 a, 320 b, 320 c, 322 b, 322 c,324 b, 324 c, 326 b, or 326 c can provide charges, for example,electrons or holes, to respective charge trapping layer 308 a, 310 b,310 c, 312 b, 312 c, 314 b, 314 c, 316 b, or 316 c, tunneling throughtunneling layer 317. Channel layers 318 a, 320 b, 320 c, 322 b, 322 c,324 b, 324 c, 326 b, and 326 c can include silicon, such as amorphoussilicon, polysilicon, or single-crystal silicon. In some embodiments,each channel layer 318 a, 320 b, 320 c, 322 b, 322 c, 324 b, 324 c, 326b, or 326 c includes polysilicon. It is understood that although ninechannel layers are shown in FIG. 3, it is understood that 3D memorydevice 300 may have different numbers of channel layers in otherembodiments. The number of the channel layers can correspond to thenumber of levels, stairs, and platforms of the two-sided staircase shapeof gate electrode 304, as described above in detail. In someembodiments, 3D memory device 300 includes at least five discretechannel layers at three levels.

Two-sided staircase-shaped gate electrode 304 in conjunction with thememory film (including blocking layer 306, charge trapping layers 308 a,310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 c, andtunneling layer 317) and channel layers 318 a, 320 b, 320 c, 322 b, 322c, 324 b, 324 c, 326 b, and 326 c disposed thereon can be referred toherein as a single memory deck, which has more memory cells comparedwith the single memory deck in 3D memory device 100 in FIG. 1. In someembodiments, by separating both the charge trapping layer and channellayer into nine discrete layers at five levels 301, 303, 305, 307, and309 corresponding to the stairs of the two-sided staircase shape of gateelectrode 304, 3D memory device 300 in FIG. 3 includes nine memorycells: a top memory cell 301 a, a set of left memory cells 303 c, 305 c,307 c, and 309 c, and a set of right memory cells 303 b, 305 b, 307 b,and 309 b. Top memory cell 301 a is disposed at top level 301, and eachpair of left and right memory cells 303 b and 303 c, 305 b and 305 c,307 b and 307 c, or 309 b and 309 c are disposed at respective level303, 305, 307, or 309 of the memory deck. For example, top memory cell301 a may include part of blocking layer 306, top charge trapping layer308 a, part of tunneling layer 317, and top channel layer 318 a.Similarly, each left memory cell 303 c, 305 c, 307 c, or 309 c mayinclude part of blocking layer 306, respective left charge trappinglayer 310 c, 312 c, 314 c, or 316 c, part of tunneling layer 317, andrespective left channel layer 320 c, 322 c, 324 c, or 326 c. Similarly,each right memory cell 303 b, 305 b, 307 b, or 309 b may include part ofblocking layer 306, respective right charge trapping layer 310 b, 312 b,314 b, or 316 b, part of tunneling layer 317, and respective rightchannel layer 320 b, 322 b, 324 b, or 326 b. Top, left, and right memorycells 301 a, 303 b, 303 c, 305 b, 305 c, 307 b, 307 c, 309 b, and 309 ccan share same gate electrode 304. Top, left, and right memory cells 301a, 303 b, 303 c, 305 b, 305 c, 307 b, 307 c, 309 b, and 309 c of 3Dmemory device 300 can be controlled by gate electrode 304.

It is understood that although nine memory cells are shown in FIG. 3, itis understood that 3D memory device 300 may have different numbers ofmemory cells in other embodiments. The number of memory cells cancorrespond to the number of levels, stairs, and platforms of thetwo-sided staircase shape of gate electrode 304, as described above indetail. In some embodiments, 3D memory device 300 includes at least fivememory cells at three levels. Although not shown in FIG. 3, it isunderstood that any other suitable components may be included as part of3D memory device 300. For example, local contacts, such as bit linecontacts, word line contacts, source line contacts, may be included in3D memory device 300 for pad-out, i.e., electrically connecting memorycells 301 a, 303 b, 303 c, 305 b, 305 c, 307 b, 307 c, 309 b, and 309 cfor metal routing to interconnects (e.g., MEOL interconnects and BEOLinterconnects). In one example, gate electrode 304 may be padded outusing word line contacts through the sidewalls of the memory film. Inanother example, each channel layer 318 a, 320 b, 320 c, 322 b, 322 c,324 b, 324 c, 326 b, or 326 c may be padded out using bit line contactsfrom a respective top surface. In some embodiments, 3D memory device 300further includes peripheral circuits, such as any suitable digital,analog, and/or mixed-signal peripheral circuits used for facilitatingthe operation of 3D memory device 300. For example, the peripheralcircuits can include one or more of a page buffer, a decoder (e.g., arow decoder and a column decoder), a sense amplifier, a driver, a chargepump, a current or voltage reference, or any active or passivecomponents of the circuits (e.g., transistors, diodes, resistors, orcapacitors).

FIG. 4 illustrates a cross-section of yet another exemplary 3D memorydevice 400 having a single memory deck, according to some embodiments ofthe present disclosure. 3D memory device 400 is similar to 3D memorydevice 300 in FIG. 3 except for the channel layer. The structures,functions, and materials of the same components that have been describedabove with respect to 3D memory device 300 in FIG. 3 are not repeatedfor ease of description. Instead of having discrete channel layers(e.g., top, left, and right channel layers 318 a, 320 b, 320 c, 322 b,322 c, 324 b, 324 c, 326 b, and 326 c in 3D memory device 300), 3Dmemory device 400 includes a continuous channel layer 402 on tunnelinglayer 317. As shown in FIG. 4, channel layer 402 is continuous anddisposed along at least the top surface of tunneling layer 317,according to some embodiments. That is, channel layer 402 can be acontinuous layer that covers tunneling layer 317 underneath. Channellayer 402 can provide charges, for example, electrons or holes, to top,left, and right charge trapping layer 308 a, 310 b, 310 c, 312 b, 312 c,314 b, 314 c, 316 b, and 316 c, tunneling through tunneling layer 317.Channel layer 402 can include silicon, such as amorphous silicon,polysilicon, or single-crystal silicon. In some embodiments, channellayer 402 includes polysilicon.

Due to the different design of the channel layer, the single memory deckof 3D memory device 400 includes a single memory cell, as opposed tonine memory cells 301 a, 303 b, 303 c, 305 b, 305 c, 307 b, 307 c, 309b, and 309 c in the single memory deck of 3D memory device 300 in FIG.3. That is, 3D memory device 400 can have one memory cell that includesblocking layer 306, top, left, and right charge trapping layers 308 a,310 b, 310 c, 312 b, 312 c, 314 b, 314 c, 316 b, and 316 c, tunnelinglayer 317, and channel layer 402. The memory cell of 3D memory device400 can be controlled by gate electrode 304.

Another way to scale-up the memory cells in the 3D memory devicesdisclosed herein is to increase the number of memory decks, for example,by stacking multiple memory decks. Any memory deck disclosed herein(e.g., the single memory decks in 3D memory devices 100, 200, 300, and400) can be used as the basic unit for scaling up the storage capacity,for example, by stacking one over another. FIG. 5A illustrates across-section of an exemplary 3D memory device 500 having multiplememory decks, according to some embodiments of the present disclosure.3D memory device 500 can include a plurality of memory decks 504, 506,and 508 stacked above a substrate 502 to increase the memory densitywithout occupying more chip area. Two adjacent memory decks (e.g., 504and 506) can be separated (e.g., insulated) by an inter-deck dielectriclayer (e.g., 526). Each memory deck 504, 506, or 508 is substantiallysimilar to the single memory deck in 3D memory device 100 in FIG. 1(with the additional inter-deck dielectric layer). Thus, the componentsof each memory deck 504, 506, or 508 are substantially similar to theircounterparts in 3D memory device 100 in FIG. 1 and thus, are not berepeated in detail herein

As illustrated in FIG. 5A, memory deck 504 of 3D memory device 500 caninclude a gate electrode 514, a blocking layer 516 on gate electrode514, a plurality of charge trapping layers 518 a, 518 b, and 518 c onblocking layer 516, a tunneling layer 520 on charge trapping layers 518a, 518 b, and 518 c, and a plurality of channel layers 522 a, 522 b, and522 c on tunneling layer 520. Gate electrode 514 can have an inverted“T” shape, which includes a head at a first level 510 and two shouldersat a second level 512 below first level 510. Charge trapping layers 518a, 518 b, and 518 c are discrete and disposed at different levels 510and 512, according to some embodiments. In some embodiments, firstcharge trapping layer 518 a is disposed laterally between second andthird charge trapping layers 518 b and 518 c. In some embodiments,second and third charge trapping layers 518 b and 518 c are disposed atsame second level 512 that is below first level 510 at which firstcharge trapping layer 518 a is disposed. For example, second and thirdcharge trapping layers 518 b and 518 c may be disposed corresponding tothe two shoulders of the inverted “T” shape of gate electrode 514,respectively, and first charge trapping layer 518 a is disposedcorresponding to the head of the inverted “T” shape of gate electrode514. Similarly, channel layers 522 a, 522 b, and 522 c are discrete anddisposed at different levels 510 and 512, according to some embodiments.Each channel layer 522 a, 522 b, or 522 c can correspond to respectiveone of charge trapping layers 518 a, 518 b, and 518 c. In someembodiments, first channel layer 522 a is disposed laterally betweensecond and third channel layers 522 b and 522 c. In some embodiments,second and third channel layers 522 b and 522 c are disposed at samesecond level 512 that is below first level 510 at which first channellayer 522 a is disposed. For example, second and third channel layers522 b and 522 c may be disposed corresponding to the two shoulders ofthe inverted “T” shape of gate electrode 514, respectively, and firstchannel layer 522 a is disposed corresponding to the head of theinverted “T” shape of gate electrode 514.

In some embodiments, blocking layer 516 is continuous and disposed alongat least the top surface of gate electrode 514. In some embodiments,tunneling layer 520 is continuous and disposed along at least the topsurfaces of each charge trapping layer 518 a, 518 b, or 518 c. Blockinglayer 516 includes silicon oxide, each charge trapping layer 518 a, 518b, or 518 c includes silicon nitride, and tunneling layer 520 includessilicon oxide, according to some embodiments. In some embodiments, eachchannel layer 522 a, 522 b, or 522 c includes polysilicon. Memory deck504 of 3D memory device 500 can include a first memory cell 524 a, asecond memory cell 524 b, and a third memory cell 524 c. In someembodiments, first, second, and third memory cells 524 a, 524 b, and 524c include first, second, and third charge trapping layers 518 a, 518 b,and 518 c, respectively. In some embodiments, first, second, and thirdmemory cells 524 a, 524 b, and 524 c include first, second, and thirdchannel layers 522 a, 522 b, and 522 c, respectively. In someembodiments, each of first, second, and third memory cells 524 a, 524 b,and 524 c includes a respective part of blocking layer 516 and arespective part of tunneling layer 520.

As illustrated in FIG. 5A, memory deck 504 can further includeinter-deck dielectric layer 526 on channel layers 522 a, 522 b, and 522c. In some embodiments, the top surface of inter-deck dielectric layer526 is nominally flat. For example, the top surface of inter-deckdielectric layer 526 may be nominally parallel to the lateral surface ofsubstrate 502. A gate electrode 528 of memory deck 506 immediately abovememory deck 504 is disposed on the top surface of inter-deck dielectriclayer 526, according to some embodiments. In some embodiments, thebottom surface of gate electrode 528 is nominally flat. For example, thebottom surface of gate electrode 528 may be nominally parallel to thelateral surface of substrate 502 as well. In other words, the topsurface of inter-deck dielectric layer 526 can fit the bottom surface ofgate electrode 528 thereabove. Inter-deck dielectric layer 526 can be asingle dielectric layer or a composite dielectric layer having multiplesub-dielectric layers. In some embodiments, inter-dielectric layer 526includes silicon oxide, silicon nitride, silicon oxynitride, or anycombinations thereof.

It is understood that memory decks 506 and 508 are substantially similarto memory deck 504. Thus, the components of memory decks 506 and 508 arenot repeated herein for ease of description. Separated by inter-deckdielectric layers (e.g., 526), each gate electrode (e.g., 514 or 528) of3D memory device 500 can be individually addressed to control therespective memory cells disposed thereon. It is also understood that thenumber of memory decks stacked above substrate 502 is not limited to theexample described with respect to FIG. 5A and can be any positiveinteger greater than one. It is further understood that any suitableinterconnects between memory decks 504, 506, and 508 for electricallyconnecting memory decks 504, 506, and 508 as well as pad-outinterconnects of 3D memory device 500 can be included as part of 3Dmemory device 500, along with any suitable peripheral circuits for 3Dmemory device 500.

FIG. 5B illustrates a cross-section of another exemplary 3D memorydevice 501 having multiple memory decks 503, 505, and 507, according tosome embodiments of the present disclosure. 3D memory device 501 issimilar to 3D memory device 500 in FIG. 5A except for the channel layerin each memory deck 503, 505, or 507. The structures, functions, andmaterials of the same components that have been described above withrespect to 3D memory device 500 in FIG. 5A are not repeated for ease ofdescription. Instead of having discrete channel layers (e.g., first,second, and third channel layers 522 a, 522 b, and 522 c in 3D memorydevice 500), 3D memory device 501 includes a continuous channel layer509 on tunneling layer 520. As shown in FIG. 5B, channel layer 509 inmemory deck 503 is continuous and disposed along at least the topsurface of tunneling layer 520, according to some embodiments. That is,channel layer 509 can be a continuous layer that covers tunneling layer520 underneath. Channel layer 509 can provide charges, for example,electrons or holes, to first, second, and third charge trapping layer518 a, 518 b, or 518 c, tunneling through tunneling layer 520. Channellayer 509 can include silicon, such as amorphous silicon, polysilicon,or single-crystal silicon. In some embodiments, channel layer 509includes polysilicon.

Due to the different design of the channel layer, each memory deck 503,505, or 507 of 3D memory device 501 includes a single memory cell, asopposed to three memory cells (e.g., 524 a, 524 b, and 524 c) in eachmemory deck 504, 506, or 508 of 3D memory device 500 in FIG. 5A. Thatis, each memory deck 503, 505, or 507 of 3D memory device 501 can haveone memory cell that includes blocking layer 516, first, second, andthird charge trapping layers 518 a, 518 b, and 518 c, tunneling layer520, and channel layer 509. The memory cell in each memory deck 504,506, or 508 of 3D memory device 501 can be controlled by a respectivegate electrode (e.g., 514 or 528). Separated by inter-deck dielectriclayers (e.g., 526), each gate electrode (e.g., 514 or 528) of 3D memorydevice 501 can be individually addressed to control the respectivememory cell disposed thereon. It is understood that any other memorydecks disclosed herein, such as the memory decks of 3D memory devices300 and 400 in FIGS. 3 and 4, may be stacked above substrate 502 in thesame manner as described above with respect to FIGS. 5A and 5B (withinter-deck dielectric layers, e.g., 526).

FIG. 6A illustrates a cross-section of still another exemplary 3D memorydevice 600 having multiple memory decks, according to some embodimentsof the present disclosure. 3D memory device 600 can include a pluralityof memory decks 604, 606, and 608 stacked above a substrate 602 toincrease the memory density without occupying more chip area. Twoadjacent memory decks (e.g., 604 and 606) can be separated (e.g.,insulated) by an inter-deck dielectric layer (e.g., 626). Each memorydeck 604, 606, or 608 is substantially similar to the single memory deckin 3D memory device 100 in FIG. 1 (with the additional inter-deckdielectric layer). Thus, the components of each memory deck 604, 606, or608 are substantially similar to their counterparts in 3D memory device100 in FIG. 1 and thus, are not be repeated in detail herein

As illustrated in FIG. 6A, bottom memory deck 604 of 3D memory device600 is the memory deck immediately above substrate 602. Bottom memorydeck 604 can include a bottom gate electrode 614, a blocking layer 616on bottom gate electrode 614, a plurality of charge trapping layers 618a, 618 b, and 618 c on blocking layer 616, a tunneling layer 620 oncharge trapping layers 618 a, 618 b, and 618 c, and a plurality ofchannel layers 622 a, 622 b, and 622 c on tunneling layer 620. Bottomgate electrode 614 can have an inverted “T” shape, which includes a headat a first level 610 and two shoulders at a second level 612 below firstlevel 610. Charge trapping layers 618 a, 618 b, and 618 c are discreteand disposed at different levels 610 and 612, according to someembodiments. In some embodiments, first charge trapping layer 618 a isdisposed laterally between second and third charge trapping layers 618 band 618 c. In some embodiments, second and third charge trapping layers618 b and 618 c are disposed at same second level 612 that is belowfirst level 610 at which first charge trapping layer 618 a is disposed.For example, second and third charge trapping layers 618 b and 618 c maybe disposed corresponding to the two shoulders of the inverted “T” shapeof bottom gate electrode 614, respectively, and first charge trappinglayer 618 a is disposed corresponding to the head of the inverted “T”shape of bottom gate electrode 614. Similarly, channel layers 622 a, 622b, and 622 c are discrete and disposed at different levels 610 and 612,according to some embodiments. Each channel layer 622 a, 622 b, or 622 ccan correspond to respective one of charge trapping layers 618 a, 618 b,and 618 c. In some embodiments, first channel layer 622 a is disposedlaterally between second and third channel layers 622 b and 622 c. Insome embodiments, second and third channel layers 622 b and 622 c aredisposed at same second level 612 that is below first level 610 at whichfirst channel layer 622 a is disposed. For example, second and thirdchannel layers 622 b and 622 c may be disposed corresponding to the twoshoulders of the inverted “T” shape of bottom gate electrode 614,respectively, and first channel layer 622 a is disposed corresponding tothe head of the inverted “T” shape of bottom gate electrode 614.

In some embodiments, blocking layer 616 is continuous and disposed alongat least the top surface of bottom gate electrode 614. In someembodiments, tunneling layer 620 is continuous and disposed along atleast the top surfaces of each charge trapping layer 618 a, 618 b, or618 c. Blocking layer 616 includes silicon oxide, each charge trappinglayer 618 a, 618 b, or 618 c includes silicon nitride, and tunnelinglayer 620 includes silicon oxide, according to some embodiments. In someembodiments, each channel layer 622 a, 622 b, or 622 c includespolysilicon. Bottom memory deck 604 of 3D memory device 600 can includea first memory cell 624 a, a second memory cell 624 b, and a thirdmemory cell 624 c. In some embodiments, first, second, and third memorycells 624 a, 624 b, and 624 c include first, second, and third chargetrapping layers 618 a, 618 b, and 618 c, respectively. In someembodiments, first, second, and third memory cells 624 a, 624 b, and 624c include first, second, and third channel layers 622 a, 622 b, and 622c, respectively. In some embodiments, each of first, second, and thirdmemory cells 624 a, 624 b, and 624 c includes a respective part ofblocking layer 616 and a respective part of tunneling layer 620.

As illustrated in FIG. 6A, memory deck 604 can further includeinter-deck dielectric layer 626 on channel layers 622 a, 622 b, and 622c. Different from inter-deck dielectric layer 526 with a nominally flattop surface, in some embodiments, the top surface of inter-deckdielectric layer 626 fits the top surface of bottom gate electrode 614.For example, the top surface of inter-deck dielectric layer 626 may havethe profile that matches the profile of the top surface of bottom gateelectrode 614. A gate electrode 628 of memory deck 606 immediately abovebottom memory deck 604 is disposed on the top surface of inter-deckdielectric layer 626, according to some embodiments. In someembodiments, the bottom surface of bottom gate electrode 614 isnominally flat, and the bottom surface of each gate electrode 628 or 630of other memory decks 606 and 608 (i.e., other than bottom memory deck604) fits the top surface of respective gate electrode 628 or 630. Forexample, the bottom surface of bottom gate electrode 614 may benominally parallel to the lateral surface of substrate 602 as well, andthe bottom surface of each other gate electrode 628 or 630 may have theprofile that matches the profile of the top surface of respective gateelectrode 628 or 630. In some embodiments, the bottom surface of gateelectrode 628 or 630 has a concave shape, and the top surface of gateelectrode 628 or 630 has a convex shape. Inter-deck dielectric layer 626can be a single dielectric layer or a composite dielectric layer havingmultiple sub-dielectric layers. In some embodiments, inter-dielectriclayer 626 includes silicon oxide, silicon nitride, silicon oxynitride,or any combinations thereof.

It is understood that memory decks 606 and 608 are substantially similarto memory deck 604 except for the shape of the gate electrodes asdescribed above. Thus, the components of memory decks 606 and 608 arenot repeated herein for ease of description. Separated by inter-deckdielectric layers (e.g., 626), each gate electrode 614, 628, or 630 of3D memory device 600 can be individually addressed to control therespective memory cells disposed thereon. It is also understood that thenumber of memory decks stacked above substrate 602 is not limited to theexample described with respect to FIG. 6A and can be any positiveinteger greater than one. It is further understood that any suitableinterconnects between memory decks 604, 606, and 608 for electricallyconnecting memory decks 604, 606, and 608 as well as pad-outinterconnects of 3D memory device 600 can be included as part of 3Dmemory device 600, along with any suitable peripheral circuits for 3Dmemory device 600.

FIG. 6B illustrates a cross-section of yet another exemplary 3D memorydevice 601 having multiple memory decks 603, 605, and 607, according tosome embodiments of the present disclosure. 3D memory device 601 issimilar to 3D memory device 600 in FIG. 6A except for the channel layerin each memory deck 603, 605, or 607. The structures, functions, andmaterials of the same components that have been described above withrespect to 3D memory device 600 in FIG. 6A are not repeated for ease ofdescription. Instead of having discrete channel layers (e.g., first,second, and third channel layers 622 a, 622 b, and 622 c in 3D memorydevice 600), 3D memory device 601 includes a continuous channel layer609 on tunneling layer 620. As shown in FIG. 6B, channel layer 609 inmemory deck 603 is continuous and disposed along at least the topsurface of tunneling layer 620, according to some embodiments. That is,channel layer 609 can be a continuous layer that covers tunneling layer620 underneath. Channel layer 609 can provide charges, for example,electrons or holes, to first, second, and third charge trapping layer618 a, 618 b, or 618 c, tunneling through tunneling layer 620. Channellayer 609 can include silicon, such as amorphous silicon, polysilicon,or single-crystal silicon. In some embodiments, channel layer 609includes polysilicon.

Due to the different design of the channel layer, each memory deck 603,605, or 607 of 3D memory device 601 includes a single memory cell, asopposed to three memory cells (e.g., 624 a, 624 b, and 624 c) in eachmemory deck 604, 606, or 608 of 3D memory device 600 in FIG. 6A. Thatis, each memory deck 603, 605, or 607 of 3D memory device 601 can haveone memory cell that includes blocking layer 616, first, second, andthird charge trapping layers 618 a, 618 b, and 618 c, tunneling layer620, and channel layer 609. The memory cell in each memory deck 603,605, or 607 of 3D memory device 601 can be controlled by respective gateelectrode 614, 628, or 630. Separated by inter-deck dielectric layers(e.g., 626), each gate electrode 614, 628, or 630 of 3D memory device601 can be individually addressed to control the respective memory celldisposed thereon. It is understood that any other memory decks disclosedherein, such as the memory decks of 3D memory devices 300 and 400 inFIGS. 3 and 4, may be stacked above substrate 602 in the same manner asdescribed above with respect to FIGS. 6A and 6B (with inter-deckdielectric layers, e.g., 626).

Still another way to scale-up the memory cells in the 3D memory devicesdisclosed herein is to have multiple memory films along the y-direction(perpendicular to the cross-sections in FIGS. 1-4, 5A, 5B, 6A, and 6B)and/or have multiple gate electrodes in the same plane along thex-direction. FIG. 7 illustrates a plan view of an exemplary 3D memorydevice 700 having multiple gate electrodes, according to someembodiments of the present disclosure. 3D memory device 700 can includea plurality of gate electrodes 701 and 703 in the same plane above asubstrate 702. It is understood that more than two gate electrodes 701and 703 may be included along the x-direction. Each gate electrode 701or 703 can be individually addressed to control the memory cells formedthereon.

In some embodiments, a plurality of memory films are disposed on eachgate electrode 701 or 703. As described above, a memory film cancorrespond to one or three memory cells depending on whether the channellayer is a continuous layer or three discrete layers. For example, aplurality of memory films 706 a, 706 b, 706 c, 706 d, 706 e, 706 f, and706 g may be disposed on gate electrode 701, and each memory film 706 a,706 b, 706 c, 706 d, 706 e, 706 f, or 706 g may correspond to threememory cells. It is understood that the example of FIG. 7 may becombined with the examples of FIGS. 5A, 5B, 6A, and 6B, such that thenumber of memory cells can be scaled-up in multiple dimensions. Forexample, each gate electrode 701 or 703 in FIG. 7 can further havemultiple memory decks stacked above substrate 702 as described above indetail with respect to FIGS. 5A, 5B, 6A, and 6B.

FIGS. 8A-8H illustrate an exemplary fabrication process for forming a 3Dmemory device having a single memory deck, according to some embodimentsof the present disclosure. FIG. 12 is a flowchart of an exemplary methodfor forming a 3D memory device having a single memory deck, according tosome embodiments. Examples of the 3D memory device depicted in FIGS.8A-8H and 12 include 3D memory devices 100 and 200 depicted in FIGS. 1and 2, respectively. FIGS. 8A-8H and 12 will be described together. Itis understood that the operations shown in method 1200 are notexhaustive and that other operations can be performed as well before,after, or between any of the illustrated operations. Further, some ofthe operations may be performed simultaneously, or in a different orderthan shown in FIG. 12.

Referring to FIG. 12, method 1200 starts at operation 1202, in which agate electrode having an inverted “T” shape is formed above a substrate.In some embodiments, to form the gate electrode, a gate electrode layeris deposited above the substrate, and the gate electrode layer ispatterned to have the inverted “T” shape. In some embodiments, to formthe gate electrode, a first gate electrode layer is formed above thesubstrate, and a second gate electrode layer is formed on the first gateelectrode layer. A lateral dimension of the first gate electrode layeris greater than a lateral dimension of the second gate electrode layer,according to some embodiments. The substrate can be a silicon substrate.

As illustrated in FIG. 8B, a gate electrode 804 having an inverted “T”shape is formed above a silicon substrate 802. To form the inverted “T”shaped gate electrode 804, as illustrated in FIG. 8A, a gate electrodelayer 801 is first formed above silicon substrate 802. In someembodiments, a pad layer (not shown) is deposited on silicon substrate802 first before the formation of gate electrode layer 801. Gateelectrode layer 801 and the pad layer (if any) can be deposited by oneor more deposition processes including, but not limited to, physicalvapor deposition (PVD), chemical vapor deposition (CVD), atomic layerdeposition (ALD), electroplating, electroless plating, or anycombination thereof. In some embodiments, gate electrode layer 801 isfurther patterned to have the inverted “T” shape, i.e., becoming gateelectrode 804 (as shown in FIG. 8B) by processes includingphotolithography, development, wet etching and/or drying etching, etc.For example, two dents at the edges of gate electrode layer 801 (in thex-direction) may be etched to form the inverted “T” shape of gateelectrode 804. In some embodiments, instead of patterning gate electrodelayer 801, another gate electrode layer (e.g., becoming the head of theinverted “T” shape of gate electrode 804 as shown in FIG. 8B) having alateral dimension (in the x-direction) smaller than the lateraldimension of gate electrode layer 801 is further deposited on gateelectrode layer 801 to form the inverted “T” shape of gate electrode804. The other gate electrode layer can be deposited by one or moredeposition processes including, but not limited to, PVD, CVD, ALD,electroplating, electroless plating, or any combination thereof.

Method 1200 proceeds to operation 1204, as illustrated in FIG. 12, inwhich a continuous blocking layer is formed on the gate electrode. Asillustrated in FIG. 8C, a continuous blocking layer 806 is formed ongate electrode 804. Blocking layer 806 can be deposited by one or morethin film deposition processes including, but not limited to, PVD, CVD,ALD, or any combination thereof. In some embodiments, blocking layer 806is deposited on gate electrode 804 using ALD. In some embodiments,blocking layer 806 is formed by subsequently depositing a high-kdielectric layer, a first silicon oxide layer, a silicon oxynitridelayer, and a second silicon oxide layer in this order on gate electrode804 using ALD.

Method 1200 proceeds to operation 1206, as illustrated in FIG. 12, inwhich a continuous charge trapping layer is deposited on the blockinglayer. A first thickness of a first part of the charge trapping layerextending laterally can be greater than a second thickness of a secondpart of the charge trapping layer extending vertically. In someembodiments, to form the continuous charge trapping layer, the chargetrapping layer is deposited on the blocking layer using CVD, such asALD.

As illustrated in FIG. 8D, a continuous charge trapping layer 808 isformed on blocking layer 806. Charge trapping layer 808 can be depositedby one or more thin film deposition processes including, but not limitedto, PVD, CVD, ALD, or any combination thereof. In some embodiments,charge trapping layer 808 is deposited on blocking layer 806 using CVD,such as ALD. In some embodiments, charge trapping layer 808 is formed bysubsequently depositing a first silicon nitride layer, a first siliconoxynitride layer, a second silicon nitride layer, a second siliconoxynitride layer, and a third silicon nitride layer in this order onblocking layer 806 using ALD. Due to the uneven top surface of blockinglayer 806, charge trapping layer 808 deposited thereon can be anonuniform layer with a variation of thickness, in particular betweenthe first part deposited on the upper sides of blocking layer 806extending laterally and the second part deposited on the sidewalls ofblocking layer 806 extending vertically. As shown in FIG. 8D, the firstthickness tl of the first part of charge trapping layer 808 extendinglaterally is greater than the second thickness t2 of the second part ofcharge trapping layer 808 extending vertically.

Method 1200 proceeds to operation 1208, as illustrated in FIG. 12, inwhich the second part of the charge trapping layer extending verticallyis removed to form a plurality of discrete charge trapping layersdisposed at different levels on the blocking layer from the first partof the charge trapping layer extending laterally. In some embodiments,to remove the second part of the charge trapping layer, the chargetrapping layer is etched using wet etching until the second part of thecharge trapping layer extending vertically is removed.

As illustrated in FIG. 8E, the second part of charge trapping layer 808extending vertically (shown in FIG. 8D) is removed, for example, by wetetching using any suitable etchants. In some embodiments, chargetrapping layer 808 is etched using wet etching until the second part ofcharge trapping layer 808 extending vertically is removed, for example,by controlling the etching time. Other etching conditions, such asetchant concentration, temperature, stirring, etc., can be adjustedaccordingly to control the suitable stop timing of the wet etching. Dueto the thickness difference between t1 and t2, the second part of chargetrapping layer 808 extending vertically can be removed faster than thefirst part of charge trapping layer 808 extending laterally. As aresult, by controlling the stop timing of wet etching, discrete chargetrapping layers 810 a, 810 b, and 810 c disposed at different levels onblocking layer 806 can be formed from the first part of charge trappinglayer 808 extending laterally (e.g., with a reduced thickness due to theetching).

Method 1200 proceeds to operation 1210, as illustrated in FIG. 12, inwhich a continuous tunneling layer is formed on the discrete chargetrapping layers. As illustrated in FIG. 8F, a continuous tunneling layer812 is formed on charge trapping layers 810 a, 810 b, and 810 c.Tunneling layer 812 can be deposited by one or more thin film depositionprocesses including, but not limited to, PVD, CVD, ALD, or anycombination thereof. In some embodiments, tunneling layer 812 isdeposited on charge trapping layers 810 a, 810 b, and 810 c using ALD.In some embodiments, tunneling layer 812 is formed by subsequentlydepositing a first silicon oxide layer, a first silicon oxynitridelayer, a second silicon oxynitride layer, a third silicon oxynitridelayer, and a second silicon oxide layer in this order on charge trappinglayers 810 a, 810 b, and 810 c using ALD.

Method 1200 proceeds to operation 1212, as illustrated in FIG. 12, inwhich a continuous channel layer is formed on the tunneling layer. Insome embodiments, to form the continuous channel layer, the channellayer is deposited on the tunneling layer using CVD, such as ALD. Asillustrated in FIG. 8G, a continuous channel layer 814 is formed ontunneling layer 812. Channel layer 814 can be deposited by one or morethin film deposition processes including, but not limited to, PVD, CVD,ALD, or any combination thereof. In some embodiments, channel layer 814is deposited on tunneling layer 812 using ALD.

Similar to the charge trapping layer, a first thickness of a first partof the channel layer extending laterally is greater than a secondthickness of a second part of channel layer extending vertically,according to some embodiments. It is understood that in someembodiments, method 1200 may proceed to operation 1214, as illustratedin FIG. 12, in which the second part of the channel layer extendingvertically may be removed to form a plurality of discrete channel layersdisposed at different levels on the tunneling layer. Each of the channellayers may correspond to a respective one of the charge trapping layers.In some embodiments, to remove the second part of the channel layer, thechannel layer is etched using wet etching until the second part of thechannel layer extending vertically is removed.

As illustrated in FIG. 8G, due to the uneven top surface of tunnelinglayer 812, channel layer 814 deposited thereon can be a nonuniform layerwith a variation of thickness, in particular between the first partdeposited on the upper sides of tunneling layer 812 extending laterallyand the second part deposited on the sidewalls of tunneling layer 812extending vertically. As shown in FIG. 8G, the first thickness t3 of thefirst part of channel layer 814 extending laterally is greater than thesecond thickness t4 of the second part of channel layer 814 extendingvertically.

As illustrated in FIG. 8H, the second part of channel layer 814extending vertically (shown in FIG. 8G) is removed, for example, by wetetching using any suitable etchants. In some embodiments, channel layer814 is etched using wet etching until the second part of channel layer814 extending vertically is removed, for example, by controlling theetching time. Other etching conditions, such as etchant concentration,temperature, stirring, etc., can be adjusted accordingly to control thesuitable stop timing of the wet etching. Due to the thickness differencebetween t3 and t4, the second part of channel layer 814 extendingvertically can be removed faster than the first part of channel layer814 extending laterally. As a result, by controlling the stop timing ofwet etching, discrete channel layers 814 a, 814 b, and 814 c disposed atdifferent levels on tunneling layer 812 can be formed from the firstpart of channel layer 814 extending laterally (e.g., with a reducedthickness due to the etching). Each discrete channel layer 814 a, 814 b,or 814 c can correspond to respective discrete charge trapping layer 810a, 810 b, or 810 c.

FIGS. 9A-9G illustrate an exemplary fabrication process for forminganother 3D memory device having a single memory deck, according to someembodiments of the present disclosure. FIG. 13 is a flowchart of anotherexemplary method for forming a 3D memory device having a single memorydeck, according to some embodiments. Examples of the 3D memory devicedepicted in FIGS. 9A-9G and 13 include 3D memory devices 300 and 400depicted in FIGS. 3 and 4, respectively. FIGS. 9A-9G and 13 will bedescribed together. It is understood that the operations shown in method1300 are not exhaustive and that other operations can be performed aswell before, after, or between any of the illustrated operations.Further, some of the operations may be performed simultaneously, or in adifferent order than shown in FIG. 13.

Referring to FIG. 13, method 1300 starts at operation 1302, in which agate electrode having a two-sided staircase shape is formed above asubstrate. In some embodiments, to form the gate electrode, a gateelectrode layer is deposited above the substrate, a photoresist layer iscoated on the gate electrode layer, and the gate electrode layer ispatterned to have the two-sided staircase shape by a plurality of cyclesof trimming the photoresist layer and etching the gate electrode layer.In some embodiments, to form the gate electrode, a plurality of gateelectrode layers are subsequently deposited above the substrate. Alateral dimension of each of the gate electrode layers can be greaterthan a lateral dimension of the subsequently deposited gate electrodelayer. The substrate can be a silicon substrate.

As illustrated in FIG. 9A, a gate electrode 904 having a two-sidedstaircase shape is formed above a silicon substrate 902. To form thetwo-sided staircase-shaped gate electrode 904, a gate electrode layer(not shown) can be first formed above silicon substrate 902. In someembodiments, a pad layer (not shown) is deposited on silicon substrate902 first before the formation of the gate electrode layer. The gateelectrode and the pad layer (if any) can be deposited by one or moredeposition processes including, but not limited to, PVD, CVD, ALD,electroplating, electroless plating, or any combination thereof. In someembodiments, a photoresist layer (not shown) can be coated on the gateelectrode layer using spin coating, spray coating, etc. The two-sidedstaircase shape of gate electrode 904 then can be formed by theso-called “trim-etch” processes, which, in each cycle, trim (e.g.,etching incrementally and inwardly, often from all directions) apatterned photoresist layer, followed by etching the exposed portions ofthe gate electrode layer using the trimmed photoresist layer as an etchmask to form a pair of stairs in one level of the two-sided staircaseshape of gate electrode 904. That is, the gate electrode layer can bepatterned to have the two-sided staircase shape by a plurality of cyclesof trimming the photoresist layer and etching the gate electrode layer.

In some embodiments, instead of patterning a single gate electrode layer(with sufficient thickness) by the trim-etch processes, a plurality ofgate electrode layers are subsequently deposited above silicon substrate902. The lateral dimension (in the x-direction) of each of the gateelectrode layers can be greater than the lateral dimension of thesubsequently deposited gate electrode layer, such that depositedmultiple gate electrode layers can become the two-sided staircase-shapedgate electrode 904. The gate electrode layers can be subsequentlydeposited by a plurality of deposition processes including, but notlimited to, PVD, CVD, ALD, electroplating, electroless plating, or anycombination thereof.

Method 1300 proceeds to operation 1304, as illustrated in FIG. 13, inwhich a continuous blocking layer is formed on the gate electrode. Asillustrated in FIG. 9B, a continuous blocking layer 906 is formed ongate electrode 904. Blocking layer 906 can be deposited by one or morethin film deposition processes including, but not limited to, PVD, CVD,ALD, or any combination thereof. In some embodiments, blocking layer 906is deposited on gate electrode 904 using ALD. In some embodiments,blocking layer 906 is formed by subsequently depositing a high-kdielectric layer, a first silicon oxide layer, a silicon oxynitridelayer, and a second silicon oxide layer in this order on gate electrode904 using ALD.

Method 1300 proceeds to operation 1306, as illustrated in FIG. 13, inwhich a continuous charge trapping layer is deposited on the blockinglayer. A first thickness of a first part of the charge trapping layerextending laterally can be greater than a second thickness of a secondpart of the charge trapping layer extending vertically. In someembodiments, to form the continuous charge trapping layer, the chargetrapping layer is deposited on the blocking layer using CVD, such asALD.

As illustrated in FIG. 9C, a continuous charge trapping layer 908 isformed on blocking layer 906. Charge trapping layer 908 can be depositedby one or more thin film deposition processes including, but not limitedto, PVD, CVD, ALD, or any combination thereof. In some embodiments,charge trapping layer 908 is deposited on blocking layer 906 using CVD,such as ALD. In some embodiments, charge trapping layer 908 is formed bysubsequently depositing a first silicon nitride layer, a first siliconoxynitride layer, a second silicon nitride layer, a second siliconoxynitride layer, and a third silicon nitride layer in this order onblocking layer 906 using ALD. Due to the uneven top surface of blockinglayer 906, charge trapping layer 908 deposited thereon can be anonuniform layer with a variation of thickness, in particular betweenthe first part deposited on the upper sides of blocking layer 906extending laterally and the second part deposited on the sidewalls ofblocking layer 906 extending vertically. As shown in FIG. 9C, the firstthickness tl of the first part of charge trapping layer 908 extendinglaterally is greater than the second thickness t2 of the second part ofcharge trapping layer 908 extending vertically.

Method 1300 proceeds to operation 1308, as illustrated in FIG. 13, inwhich the second part of the charge trapping layer extending verticallyis removed to form a plurality of discrete charge trapping layersdisposed on the blocking layer from the first part of the chargetrapping layer extending laterally. The plurality of discrete chargetrapping layers can be formed corresponding to stairs of the two-sidedstaircase shape of the gate electrode, respectively. In someembodiments, to remove the second part of the charge trapping layer, thecharge trapping layer is etched using wet etching until the second partof the charge trapping layer extending vertically is removed.

As illustrated in FIG. 9D, the second part of charge trapping layer 908extending vertically (shown in FIG. 9C) is removed, for example, by wetetching using any suitable etchants. In some embodiments, chargetrapping layer 908 is etched using wet etching until the second part ofcharge trapping layer 908 extending vertically is removed, for example,by controlling the etching time. Other etching conditions, such asetchant concentration, temperature, stirring, etc., can be adjustedaccordingly to control the suitable stop timing of the wet etching. Dueto the thickness difference between tl and t2, the second part of chargetrapping layer 908 extending vertically can be removed faster than thefirst part of charge trapping layer 908 extending laterally. As aresult, by controlling the stop timing of wet etching, discrete chargetrapping layers 910 a, 912 b, 912 c, 914 b, 914 c, 916 b, 916 c, 918 b,and 918 c disposed at different levels on blocking layer 906 can beformed from the first part of charge trapping layer 908 extendinglaterally (e.g., with a reduced thickness due to the etching). Discretecharge trapping layer 910 a, 912 b, 912 c, 914 b, 914 c, 916 b, 916 c,918 b, and 918 c are formed corresponding to the stairs of the two-sidedstaircase shape of gate electrode 904, respectively, according to someembodiments.

Method 1300 proceeds to operation 1310, as illustrated in FIG. 13, inwhich a continuous tunneling layer is formed on the discrete chargetrapping layers. As illustrated in FIG. 9E, a continuous tunneling layer920 is formed on charge trapping layers 910 a, 912 b, 912 c, 914 b, 914c, 916 b, 916 c, 918 b, and 918 c. Tunneling layer 920 can be depositedby one or more thin film deposition processes including, but not limitedto, PVD, CVD, ALD, or any combination thereof. In some embodiments,tunneling layer 920 is deposited on charge trapping layers 910 a, 912 b,912 c, 914 b, 914 c, 916 b, 916 c, 918 b, and 918 c using ALD. In someembodiments, tunneling layer 920 is formed by subsequently depositing afirst silicon oxide layer, a first silicon oxynitride layer, a secondsilicon oxynitride layer, a third silicon oxynitride layer, and a secondsilicon oxide layer in this order on charge trapping layers 910 a, 912b, 912 c, 914 b, 914 c, 916 b, 916 c, 918 b, and 918 c using ALD.

Method 1300 proceeds to operation 1312, as illustrated in FIG. 13, inwhich a continuous channel layer is formed on the tunneling layer. Insome embodiments, to form the continuous channel layer, the channellayer is deposited on the tunneling layer using CVD, such as ALD. Asillustrated in FIG. 9F, a continuous channel layer 922 is formed ontunneling layer 920. Channel layer 922 can be deposited by one or morethin film deposition processes including, but not limited to, PVD, CVD,ALD, or any combination thereof. In some embodiments, channel layer 922is deposited on tunneling layer 920 using ALD.

Similar to the charge trapping layer, a first thickness of a first partof the channel layer extending laterally is greater than a secondthickness of a second part of channel layer extending vertically,according to some embodiments. It is understood that in someembodiments, method 1300 may proceed to operation 1314, as illustratedin FIG. 13, in which the second part of the channel layer extendingvertically may be removed to form a plurality of discrete channel layersdisposed on the tunneling layer. The plurality of discrete channellayers can be formed corresponding to the stairs of the two-sidedstaircase shape of the gate electrode, respectively. In someembodiments, to remove the second part of the channel layer, the channellayer is etched using wet etching until the second part of the channellayer extending vertically is removed.

As illustrated in FIG. 9F, due to the uneven top surface of tunnelinglayer 920, channel layer 922 deposited thereon can be a nonuniform layerwith a variation of thickness, in particular between the first partdeposited on the upper sides of tunneling layer 920 extending laterallyand the second part deposited on the sidewalls of tunneling layer 920extending vertically. As shown in FIG. 9F, the first thickness t3 of thefirst part of channel layer 922 extending laterally is greater than thesecond thickness t4 of the second part of channel layer 922 extendingvertically.

As illustrated in FIG. 9G, the second part of channel layer 922extending vertically (shown in FIG. 9F) is removed, for example, by wetetching using any suitable etchants. In some embodiments, channel layer922 is etched using wet etching until the second part of channel layer922 extending vertically is removed, for example, by controlling theetching time. Other etching conditions, such as etchant concentration,temperature, stirring, etc., can be adjusted accordingly to control thesuitable stop timing of the wet etching. Due to the thickness differencebetween t3 and t4, the second part of channel layer 922 extendingvertically can be removed faster than the first part of channel layer922 extending laterally. As a result, by controlling the stop timing ofwet etching, discrete channel layers 924 a, 926 b, 926 c, 928 b, 928 c,930 b, 930 c, 932 b, and 932 c disposed at different levels on tunnelinglayer 920 can be formed from the first part of channel layer 922extending laterally (e.g., with a reduced thickness due to the etching).Discrete channel layers 924 a, 926 b, 926 c, 928 b, 928 c, 930 b, 930 c,932 b, and 932 c are formed corresponding to the stairs of the two-sidedstaircase shape of gate electrode 904, respectively, according to someembodiments. Each discrete channel layer 924 a, 926 b, 926 c, 928 b, 928c, 930 b, 930 c, 932 b, or 932 c can also correspond to respectivediscrete charge trapping layer 910 a, 912 b, 912 c, 914 b, 914 c, 916 b,916 c, 918 b, or 918 c.

FIGS. 10A and 10B illustrate an exemplary fabrication process forforming a 3D memory device having multiple memory decks, according tosome embodiments of the present disclosure. FIG. 14 is a flowchart of anexemplary method for forming a 3D memory device having multiple memorydecks, according to some embodiments. Examples of the 3D memory devicedepicted in FIGS. 10A, 10B, and 14 include 3D memory device 500 depictedin FIG. 5A. FIGS. 10A, 10B, and 14 will be described together. It isunderstood that the operations shown in method 1400 are not exhaustiveand that other operations can be performed as well before, after, orbetween any of the illustrated operations. Further, some of theoperations may be performed simultaneously, or in a different order thanshown in FIG. 14.

Referring to FIG. 14, method 1400 starts at operation 1402, in which afirst gate electrode having an inverted “T” shape is formed above asubstrate. In some embodiments, to form the first gate electrode, a gateelectrode layer is deposited above the substrate, and the gate electrodelayer is patterned to have the inverted “T” shape. In some embodiments,to form the first gate electrode, a lower gate electrode layer isdeposited above the substrate, and an upper gate electrode layer isformed on the lower gate electrode layer. A lateral dimension of thelower gate electrode layer is greater than a lateral dimension of theupper gate electrode layer, according to some embodiments. The substratecan be a silicon substrate. As illustrated in FIG. 10A, a first gateelectrode 1004 having an inverted “T” shape is formed above a siliconsubstrate 1002. The details of forming first gate electrode 1004 aresubstantially similar to those of gate electrode 804 in FIG. 8B andthus, are not repeated for ease of description.

Method 1400 proceeds to operation 1404, as illustrated in FIG. 14 inwhich a continuous first blocking layer is formed on the first gateelectrode. As illustrated in FIG. 10A, a continuous first blocking layer1006 is formed on first gate electrode 1004. The details of formingfirst blocking layer 1006 are substantially similar to those of blockinglayer 806 in FIG. 8C and thus, are not repeated for ease of description.

Method 1400 proceeds to operation 1406, as illustrated in FIG. 14, inwhich a plurality of discrete first charge trapping layers disposed atdifferent levels are formed on the first blocking layer. In someembodiments, to form the plurality of discrete first charge trappinglayers, a continuous charge trapping layer is formed. A first thicknessof a first part of the charge trapping layer extending laterally can begreater than a second thickness of a second part of the charge trappinglayer extending vertically. In some embodiments, to form the pluralityof discrete first charge trapping layers, the second part of the chargetrapping layer extending vertically is removed. In some embodiments, toremove the second part of the charge trapping layer, the charge trappinglayer is removed using wet etching until the second part of the chargetrapping layer extending vertically is removed. As illustrated in FIG.10A, discrete first charge trapping layers 1010 a, 1010 b, and 1010 cdisposed at different levels are formed on first blocking layer 1006.The details of forming discrete first charge trapping layers 1010 a,1010 b, and 1010 c are substantially similar to those of discrete chargetrapping layers 810 a, 810 b, and 810 c in FIGS. 8D and 8E and thus, arenot repeated for ease of description.

Method 1400 proceeds to operation 1408, as illustrated in FIG. 14, inwhich a continuous first tunneling layer is formed on the discrete firstcharge trapping layers. As illustrated in FIG. 10A, a continuous firsttunneling layer 1012 is formed on first charge trapping layers 1010 a,1010 b, and 1010 c. The details of forming first tunneling layer 1012are substantially similar to those of tunneling layer 812 in FIG. 8F andthus, are not repeated for ease of description.

Method 1400 proceeds to operation 1410, as illustrated in FIG. 14, inwhich a first channel layer is formed on the first tunneling layer. Insome embodiments, to form the first channel layer, a continuous channellayer is formed. A first thickness of a first part of the channel layerextending laterally can be greater than a second thickness of a secondpart of the channel layer extending vertically. In some embodiments, toform the first channel layer, the second part of the channel layerextending vertically is removed. In some embodiments, to remove thesecond part of the channel layer, the channel layer is removed using wetetching until the second part of the channel layer extending verticallyis removed. As illustrated in FIG. 10A, discrete first channel layers1016 a, 1016 b, and 1016 c disposed at different levels are formed onfirst tunneling layer 1012. The details of forming discrete firstchannel layers 1016 a, 1016 b, and 1016 c are substantially similar tothose of discrete channel layers 814 a, 814 b, and 814 c in FIGS. 8G and8H and thus, are not repeated for ease of description.

Method 1400 proceeds to operation 1412, as illustrated in FIG. 14, inwhich an inter-deck dielectric layer is formed on the first channellayer. A top surface of the inter-deck dielectric layer can be nominallyflat. In some embodiments, to form the inter-deck dielectric layer, theinter-deck dielectric layer is deposited on the first channel layer, andthe top surface of the inter-deck dielectric layer is planarized.

As illustrated in FIG. 10A, an inter-deck dielectric layer 1018 isformed on first channel layers 1016 a, 1016 b, and 1016 c. The topsurface of inter-deck dielectric layer 1018 is nominally flat, forexample, parallel to the lateral surface of silicon substrate 1002,according to some embodiments. Inter-deck dielectric layer 1018 can beformed by one or more deposition processes including, but not limitedto, PVD, CVD, ALD, electroplating, electroless plating, or anycombination thereof, followed by one or more planarization processes,including but not limited to, CMP, wet etching, drying etching, or anycombination thereof. For example, the deposition processes may be usedto provide a sufficient thickness for the planarization process toensure that the top surface of inter-deck dielectric layer 1018 afterthe planarization process is nominally flat and covers each firstchannel layer 1016 a, 1016 b, or 1016 c underneath. A first memory deck1020 immediately above silicon substrate 1002 including first gateelectrode 1004, first blocking layer 1006, first charge trapping layers1010 a, 1010 b, and 1010 c, first tunneling layer 1012, first channellayers 1016 a, 1016 b, and 1016 c, and inter-deck dielectric layer 1018is thereby formed.

Referring to FIG. 14, method 1400 starts at operation 1414, in which asecond gate electrode having an inverted “T” shape is formed on theinter-deck dielectric layer. In some embodiments, to form the secondgate electrode, a gate electrode layer is deposited on the inter-deckdielectric layer, and the gate electrode layer is patterned to have theinverted “T” shape. In some embodiments, to form the second gateelectrode, a lower gate electrode layer is deposited on the inter-deckdielectric layer, and an upper gate electrode layer is formed on thelower gate electrode layer. A lateral dimension of the lower gateelectrode layer is greater than a lateral dimension of the upper gateelectrode layer, according to some embodiments.

Method 1400 proceeds to operation 1416, as illustrated in FIG. 14 inwhich a continuous second blocking layer is formed on the second gateelectrode. Method 1400 proceeds to operation 1418, as illustrated inFIG. 14, in which a plurality of discrete second charge trapping layersdisposed at different levels are formed on the second blocking layer. Insome embodiments, to form the plurality of discrete second chargetrapping layers, a continuous charge trapping layer is formed. A firstthickness of a first part of the charge trapping layer extendinglaterally can be greater than a second thickness of a second part of thecharge trapping layer extending vertically. In some embodiments, to formthe plurality of discrete second charge trapping layers, the second partof the charge trapping layer extending vertically is removed. In someembodiments, to remove the second part of the charge trapping layer, thecharge trapping layer is removed using wet etching until the second partof the charge trapping layer extending vertically is removed.

Method 1400 proceeds to operation 1420, as illustrated in FIG. 14, inwhich a continuous second tunneling layer is formed on the discretesecond charge trapping layers. Method 1400 proceeds to operation 1422,as illustrated in FIG. 14, in which a second channel layer is formed onthe second tunneling layer. In some embodiments, to form the secondchannel layer, a continuous channel layer is formed. A first thicknessof a first part of the channel layer extending laterally can be greaterthan a second thickness of a second part of the channel layer extendingvertically. In some embodiments, to form the second channel layer, thesecond part of the channel layer extending vertically is removed. Insome embodiments, to remove the second part of the channel layer, thechannel layer is removed using wet etching until the second part of thechannel layer extending vertically is removed.

As illustrated in FIG. 10B, a second memory deck 1022 is formed on firstmemory deck 1020. Second memory deck 1022 includes a second gateelectrode, a second blocking layer, second charge trapping layers, asecond tunneling layer, and second channel layers, which aresubstantially similar to their counterparts in first memory deck 1020.The details of forming the components in second memory deck 1022 aresubstantially similar to those of first memory deck 1020 in FIG. 10A andthus, are not repeated for ease of description. Similarly, anotherinter-deck dielectric layer, on which a third memory deck 1024 can beformed, is formed in second memory deck 1022, according to someembodiments. Accordingly, more memory decks each including substantiallysimilar components as in first memory deck 1020 can be further stackedone over another to increase the memory density using substantiallysimilar processes as described above with respect to FIGS. 10A, 10B, and14.

FIGS. 11A-11D illustrate an exemplary fabrication process for forminganother 3D memory device having multiple memory decks, according to someembodiments of the present disclosure. FIG. 15 is a flowchart of anotherexemplary method for forming a 3D memory device having multiple memorydecks, according to some embodiments. Examples of the 3D memory devicedepicted in FIGS. 11A-11D and 15 include 3D memory device 600 depictedin FIG. 6A. FIGS. 11A-11D and 15 will be described together. It isunderstood that the operations shown in method 1500 are not exhaustiveand that other operations can be performed as well before, after, orbetween any of the illustrated operations. Further, some of theoperations may be performed simultaneously, or in a different order thanshown in FIG. 15.

Referring to FIG. 15, method 1500 starts at operation 1502, in which afirst gate electrode having an inverted “T” shape is formed above asubstrate. In some embodiments, to form the first gate electrode, a gateelectrode layer is deposited above the substrate, and the gate electrodelayer is patterned to have the inverted “T” shape. In some embodiments,to form the first gate electrode, a lower gate electrode layer isdeposited above the substrate, and an upper gate electrode layer isdeposited on the lower gate electrode layer. A lateral dimension of thelower gate electrode layer is greater than a lateral dimension of theupper gate electrode layer, according to some embodiments. The substratecan be a silicon substrate. As illustrated in FIG. 11A, a first gateelectrode 1104 having an inverted “T” shape is formed above a siliconsubstrate 1102. The details of forming first gate electrode 1104 aresubstantially similar to those of gate electrode 804 in FIG. 8B andthus, are not repeated for ease of description.

Method 1500 proceeds to operation 1504, as illustrated in FIG. 15 inwhich a continuous first blocking layer is formed on the first gateelectrode. As illustrated in FIG. 11A, a continuous first blocking layer1106 is formed on first gate electrode 1104. The details of formingfirst blocking layer 1106 are substantially similar to those of blockinglayer 806 in FIG. 8C and thus, are not repeated for ease of description.

Method 1500 proceeds to operation 1506, as illustrated in FIG. 15, inwhich a plurality of discrete first charge trapping layers disposed atdifferent levels are formed on the first blocking layer. In someembodiments, to form the plurality of discrete first charge trappinglayers, a continuous charge trapping layer is formed. A first thicknessof a first part of the charge trapping layer extending laterally can begreater than a second thickness of a second part of the charge trappinglayer extending vertically. In some embodiments, to form the pluralityof discrete first charge trapping layers, the second part of the chargetrapping layer extending vertically is removed. In some embodiments, toremove the second part of the charge trapping layer, the charge trappinglayer is removed using wet etching until the second part of the chargetrapping layer extending vertically is removed. As illustrated in FIG.11A, discrete first charge trapping layers 1110 a, 1110 b, and 1110 cdisposed at different levels are formed on first blocking layer 1106.The details of forming discrete first charge trapping layers 1110 a,1110 b, and 1110 c are substantially similar to those of discrete chargetrapping layers 810 a, 810 b, and 810 c in FIGS. 8D and 8E and thus, arenot repeated for ease of description.

Method 1500 proceeds to operation 1508, as illustrated in FIG. 15, inwhich a continuous first tunneling layer is formed on the discrete firstcharge trapping layers. As illustrated in FIG. 11A, a continuous firsttunneling layer 1112 is formed on first charge trapping layers 1110 a,1110 b, and 1110 c. The details of forming first tunneling layer 1112are substantially similar to those of tunneling layer 812 in FIG. 8F andthus, are not repeated for ease of description.

Method 1500 proceeds to operation 1510, as illustrated in FIG. 15, inwhich a first channel layer is formed on the first tunneling layer. Insome embodiments, to form the first channel layer, a continuous channellayer is formed. A first thickness of a first part of the channel layerextending laterally can be greater than a second thickness of a secondpart of the channel layer extending vertically. In some embodiments, toform the first channel layer, the second part of the channel layerextending vertically is removed. In some embodiments, to remove thesecond part of the channel layer, the channel layer is removed using wetetching until the second part of the channel layer extending verticallyis removed. As illustrated in FIG. 11A, discrete first channel layers1116 a, 1116 b, and 1116 c disposed at different levels are formed onfirst tunneling layer 1112. The details of forming discrete firstchannel layers 1116 a, 1116 b, and 1116 c are substantially similar tothose of discrete channel layers 814 a, 814 b, and 814 c in FIGS. 8G and8H and thus, are not repeated for ease of description.

Method 1500 proceeds to operation 1512, as illustrated in FIG. 15, inwhich an inter-deck dielectric layer is formed on the first channellayer. A top surface of the inter-deck dielectric layer can fit a topsurface of the first gate electrode. In some embodiments, to form theinter-deck dielectric layer, the inter-deck dielectric layer isdeposited using ALD.

As illustrated in FIG. 11A, an inter-deck dielectric layer 1118 isformed on first channel layers 1116 a, 1116 b, and 1116 c. The topsurface of inter-deck dielectric layer 1118 fits the top surface offirst gate electrode 1104, according to some embodiments. Inter-deckdielectric layer 1118 can be formed by one or more thin film depositionprocesses including, but not limited to, PVD, CVD, ALD, or anycombination thereof. In some embodiments, inter-deck dielectric layer1118 is formed on first channel layers 1116 a, 1116 b, and 1116 c usingALD. For example, the deposition processes may be used to provide aproper thickness to ensure that the top surface of inter-deck dielectriclayer 1118 after the deposition process fits the top surface of firstgate electrode 1104. A first memory deck 1120 immediately abovesubstrate 1102 including first gate electrode 1104, first blocking layer1106, first charge trapping layers 1110 a, 1110 b, and 1110 c, firsttunneling layer 1112, first channel layers 1116 a, 1116 b, and 1116 c,and inter-deck dielectric layer 1118 is thereby formed.

Referring to FIG. 15, method 1500 starts at operation 1514, in which asecond gate electrode is formed on the inter-deck dielectric layer. Atop surface of the second gate electrode can fit the top surface of theinter-deck dielectric layer. In some embodiments, to form the secondgate electrode, a gate electrode layer is deposited on the inter-deckdielectric layer, and the gate electrode layer is patterned to have atop surface of the gate electrode layer fits the top surface of thefirst gate electrode. In some embodiments, to form the second gateelectrode, a lower gate electrode layer is deposited on the inter-deckdielectric layer, and an upper gate electrode layer is deposited on thelower gate electrode layer. A lateral dimension of the lower gateelectrode layer is greater than a lateral dimension of the upper gateelectrode layer, according to some embodiments.

As illustrated in FIG. 11C, a second gate electrode 1124 is formed oninter-deck dielectric layer 1118. The top surface of second gateelectrode 1124 can fit the top surface of inter-deck dielectric layer1118. To form second gate electrode 1124, as illustrated in FIG. 11B, agate electrode layer 1122 is first formed on inter-deck dielectric layer1118 by one or more deposition processes including, but not limited to,PVD, CVD, ALD, or any combination thereof. In some embodiments, gateelectrode layer 1122 is further patterned to have the top surfacethereof fits the top surface of first gate electrode 1104, i.e.,becoming second gate electrode 1124 (as shown in FIG. 11C) by processesincluding photolithography, development, wet etching and/or dryingetching, etc. For example, two dents at the edges of gate electrodelayer 1122 (in the x-direction) may be etched. In some embodiments,instead of patterning gate electrode layer 1122 (e.g., the lower gateelectrode layer), an upper gate electrode layer having a lateraldimension (in the x-direction) smaller than the lateral dimension oflower gate electrode layer 1122 is further deposited on lower gateelectrode layer 1122 to form second gate electrode 1124. The upper gateelectrode layer can be deposited by one or more deposition processesincluding, but not limited to, PVD, CVD, ALD, electroplating,electroless plating, or any combination thereof.

Method 1500 proceeds to operation 1516, as illustrated in FIG. 15 inwhich a continuous second blocking layer is formed on the second gateelectrode. As illustrated in FIG. 11D, a continuous second blockinglayer 1126 is formed on second gate electrode 1124. The details offorming second blocking layer 1126 are substantially similar to those ofblocking layer 806 in FIG. 8C and thus, are not repeated for ease ofdescription.

Method 1500 proceeds to operation 1518, as illustrated in FIG. 15, inwhich a plurality of discrete second charge trapping layers disposed atdifferent levels are formed on the second blocking layer. In someembodiments, to form the plurality of discrete second charge trappinglayers, a continuous charge trapping layer is formed. A first thicknessof a first part of the charge trapping layer extending laterally can begreater than a second thickness of a second part of the charge trappinglayer extending vertically. In some embodiments, to form the pluralityof discrete second charge trapping layers, the second part of the chargetrapping layer extending vertically is removed. In some embodiments, toremove the second part of the charge trapping layer, the charge trappinglayer is removed using wet etching until the second part of the chargetrapping layer extending vertically is removed. As illustrated in FIG.11D, discrete second charge trapping layers 1130 a, 1130 b, and 1130 cdisposed at different levels are formed on second blocking layer 1126.The details of forming discrete second charge trapping layers 1130 a,1130 b, and 1130 c are substantially similar to those of discrete chargetrapping layers 810 a, 810 b, and 810 c in FIGS. 8D and 8E and thus, arenot repeated for ease of description.

Method 1500 proceeds to operation 1520, as illustrated in FIG. 15, inwhich a continuous second tunneling layer is formed on the discretesecond charge trapping layers. As illustrated in FIG. 11D, a continuoussecond tunneling layer 1132 is formed on second charge trapping layers1130 a, 1130 b, and 1130 c. The details of forming second tunnelinglayer 1132 are substantially similar to those of tunneling layer 812 inFIG. 8F and thus, are not repeated for ease of description.

Method 1500 proceeds to operation 1522, as illustrated in FIG. 15, inwhich a second channel layer is formed on the second tunneling layer. Insome embodiments, to form the second channel layer, a continuous channellayer is formed. A first thickness of a first part of the channel layerextending laterally can be greater than a second thickness of a secondpart of the channel layer extending vertically. In some embodiments, toform the second channel layer, the second part of the channel layerextending vertically is removed. In some embodiments, to remove thesecond part of the channel layer, the channel layer is removed using wetetching until the second part of the channel layer extending verticallyis removed. As illustrated in FIG. 11D, discrete second channel layers1136 a, 1136 b, and 1136 c disposed at different levels are formed onsecond tunneling layer 1132. The details of forming discrete secondchannel layers 1136 a, 1136 b, and 1136 c are substantially similar tothose of discrete channel layers 814 a, 814 b, and 814 c in FIGS. 8G and8H and thus, are not repeated for ease of description.

As illustrated in FIG. 11D, another inter-deck dielectric layer 1138 isalso formed on second channel layers 1136 a, 1136 b, and 1136 c usingsubstantially similar processes for forming inter-deck dielectric layer1118. A second memory deck 1140 including second gate electrode 1124,second blocking layer 1126, second charge trapping layers 1130 a, 1130b, and 1130 c, second tunneling layer 1132, second channel layers 1136a, 1136 b, 1136 c, and inter-deck dielectric layer 1138 is therebyformed on first memory deck 1120. As illustrated in FIG. 11D, a thirdmemory deck 1142 is formed on second memory deck 1140. Third memory deck1142 includes a third gate electrode, a third blocking layer, thirdcharge trapping layers, a third tunneling layer, and third channellayers, which are substantially similar to their counterparts in secondmemory deck 1140. The details of forming the components in third memorydeck 1142 are substantially similar to those of second memory deck 1140in FIGS. 11B-11D and thus, are not repeated for ease of description.Accordingly, more memory decks each including substantially similarcomponents as in second memory deck 1140 can be further stacked one overanother to increase the memory density using substantially similarprocesses as described above with respect to FIGS. 11A-11D and 14.

According to one aspect of the present disclosure, a 3D memory deviceincludes a substrate, a gate electrode above the substrate, a blockinglayer on the gate electrode, a plurality of charge trapping layers onthe blocking layer, a tunneling layer on the plurality of chargetrapping layers, and a plurality of channel layers on the tunnelinglayer. The plurality of charge trapping layers are discrete and disposedat different levels. The plurality of channel layers are discrete anddisposed at different levels. Each of the channel layers corresponds toa respective one of the charge trapping layers.

In some embodiments, the gate electrode has an inverted “T” shape.

In some embodiments, the blocking layer is continuous and disposed alongat least a top surface of the gate electrode. In some embodiments, thetunneling layer is continuous and disposed along at least top surfacesof each of the charge trapping layers.

In some embodiments, the plurality of charge trapping layers include afirst charge trapping layer, a second charge trapping layer, and a thirdcharge trapping layer, and the first charge trapping layer is disposedlaterally between the second and third charge trapping layers. In someembodiments, the second and third charge trapping layers are disposed ata same level that is below a level at which the first charge trappinglayer is disposed.

In some embodiments, the second and third charge trapping layers aredisposed corresponding to two shoulders of the inverted “T” shape of thegate electrode, respectively. In some embodiments, the first chargetrapping layer is disposed corresponding to a head of the inverted “T”shape of the gate electrode.

In some embodiments, the plurality of channel layers include a firstchannel layer, a second channel layer, and a third channel layer, andthe first channel layer is disposed laterally between the second andthird channel layers. In some embodiments, the second and third channellayers are disposed at a same level that is below a level at which thefirst channel layer is disposed.

In some embodiments, the second and third channel layers are disposedcorresponding to the two shoulders of the inverted “T” shape of the gateelectrode, respectively. In some embodiments, the first channel layer isdisposed corresponding to the head of the inverted “T” shape of the gateelectrode.

In some embodiments, the 3D memory device includes a first memory cell,a second memory cell, and a third memory cell, the first, second, andthird memory cells include the first, second, and third charge trappinglayers, respectively, the first, second, and third memory cells includethe first, second, and third channel layers, respectively, and each thefirst, second, and third memory cells includes a respective part of theblocking layer and a respective part of the tunneling layer.

In some embodiments, the blocking layer includes silicon oxide, each ofthe charge trapping layers includes silicon nitride, and the tunnelinglayer includes silicon oxide. In some embodiments, each of the channellayers includes polysilicon.

According to another aspect of the present disclosure, a 3D memorydevice includes a substrate, a gate electrode above the substrate, ablocking layer on the gate electrode, a plurality of charge trappinglayers on the blocking layer, a tunneling layer on the plurality ofcharge trapping layers, and a channel layer on the tunneling layer. Theplurality of charge trapping layers are discrete and disposed atdifferent levels.

In some embodiments, the gate electrode has an inverted “T” shape.

In some embodiments, the blocking layer is continuous and disposed alongat least a top surface of the gate electrode. In some embodiments, thetunneling layer is continuous and disposed along at least top surfacesof each of the charge trapping layers. In some embodiments, the channellayer is continuous and disposed along at least a top surface of thetunneling layer.

In some embodiments, the plurality of charge trapping layers include afirst charge trapping layer, a second charge trapping layer, and a thirdcharge trapping layer, and the first charge trapping layer is disposedlaterally between the second and third charge trapping layers. In someembodiments, the second and third charge trapping layers are disposed ata same level that is below a level at which the first charge trappinglayer is disposed.

In some embodiments, the second and third charge trapping layers aredisposed corresponding to two shoulders of the inverted “T” shape of thegate electrode, respectively. In some embodiments, the first chargetrapping layer is disposed corresponding to a head of the inverted “T”shape of the gate electrode.

In some embodiments, the blocking layer includes silicon oxide, each ofthe charge trapping layers includes silicon nitride, and the tunnelinglayer includes silicon oxide. In some embodiments, the channel layerincludes polysilicon.

According to still another aspect of the present disclosure, a methodfor forming a 3D memory device is disclosed. A gate electrode having aninverted “T” shape is formed above a substrate. A continuous blockinglayer is formed on the gate electrode. A continuous charge trappinglayer is formed on the blocking layer. A first thickness of a first partof the charge trapping layer extending laterally is greater than asecond thickness of a second part of the charge trapping layer extendingvertically. The second part of the charge trapping layer extendingvertically is removed to form a plurality of discrete charge trappinglayers disposed at different levels on the blocking layer from the firstpart of the charge trapping layer extending laterally. A continuoustunneling layer is formed on the discrete charge trapping layers. Acontinuous channel layer is formed on the tunneling layer.

In some embodiments, to form the gate electrode, a gate electrode layeris deposited above the substrate, and the gate electrode layer ispatterned to have the inverted “T” shape.

In some embodiments, to form the gate electrode, a first gate electrodelayer is deposited above the substrate, and a second gate electrodelayer is deposited on the first gate electrode layer. A lateraldimension of the first gate electrode layer is greater than a lateraldimension of the second gate electrode layer.

In some embodiments, to form the continuous charge trapping layer, thecharge trapping layer is deposited on the blocking layer using CVD. Insome embodiments, the CVD includes ALD.

In some embodiments, to remove the second part of the charge trappinglayer, the charge trapping layer is etched using wet etching until thesecond part of the charge trapping layer extending vertically isremoved.

In some embodiments, a first thickness of a first part of the channellayer extending laterally is greater than a second thickness of a secondpart of channel layer extending vertically. In some embodiments, thesecond part of the channel layer extending vertically is removed to forma plurality of discrete channel layers disposed at different levels onthe tunneling layer. Each of the channel layers corresponds to arespective one of the charge trapping layers.

In some embodiments, to form the continuous channel layer, the channellayer is deposited on the blocking layer using CVD. In some embodiments,the CVD includes ALD.

In some embodiments, to remove the second part of the channel layer, thechannel layer is etched using wet etching until the second part of thechannel layer extending vertically is removed.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A three-dimensional (3D) memory device,comprising: a substrate; a gate electrode above the substrate; ablocking layer on the gate electrode; a plurality of charge trappinglayers on the blocking layer, wherein the plurality of charge trappinglayers are discrete and disposed at different levels; a tunneling layeron the plurality of charge trapping layers; and a plurality of channellayers on the tunneling layer, wherein the plurality of channel layersare discrete and disposed at different levels, and each of the channellayers corresponds to a respective one of the charge trapping layers. 2.The 3D memory device of claim 1, wherein the gate electrode has aninverted “T” shape.
 3. The 3D memory device of claim 2, wherein theblocking layer is continuous and disposed along at least a top surfaceof the gate electrode; and the tunneling layer is continuous anddisposed along at least top surfaces of each of the charge trappinglayers.
 4. The 3D memory device of claim 2, wherein the plurality ofcharge trapping layers comprise a first charge trapping layer, a secondcharge trapping layer, and a third charge trapping layer; and the firstcharge trapping layer is disposed laterally between the second and thirdcharge trapping layers.
 5. The 3D memory device of claim 4, wherein thesecond and third charge trapping layers are disposed at a same levelthat is below a level at which the first charge trapping layer isdisposed.
 6. The 3D memory device of claim 4, wherein the second andthird charge trapping layers are disposed corresponding to two shouldersof the inverted “T” shape of the gate electrode, respectively; and thefirst charge trapping layer is disposed corresponding to a head of theinverted “T” shape of the gate electrode.
 7. The 3D memory device ofclaim 5, wherein the plurality of channel layers comprise a firstchannel layer, a second channel layer, and a third channel layer; andthe first channel layer is disposed laterally between the second andthird channel layers.
 8. The 3D memory device of claim 7, wherein thesecond and third channel layers are disposed at a same level that isbelow a level at which the first channel layer is disposed.
 9. The 3Dmemory device of claim 7, wherein the second and third channel layersare disposed corresponding to two shoulders of the inverted “T” shape ofthe gate electrode, respectively; and the first channel layer isdisposed corresponding to the head of the inverted “T” shape of the gateelectrode.
 10. The 3D memory device of claim 7, comprising a firstmemory cell, a second memory cell, and a third memory cell, wherein thefirst, second, and third memory cells comprise the first, second, andthird charge trapping layers, respectively; the first, second, and thirdmemory cells comprise the first, second, and third channel layers,respectively; and each of the first, second, and third memory cellscomprises a respective part of the blocking layer and a respective partof the tunneling layer.
 11. A three-dimensional (3D) memory device,comprising: a substrate; a gate electrode above the substrate; ablocking layer on the gate electrode; a plurality of charge trappinglayers on the blocking layer, wherein the plurality of charge trappinglayers are discrete and disposed at different levels; a tunneling layeron the plurality of charge trapping layers; and a channel layer on thetunneling layer.
 12. The 3D memory device of claim 11, wherein the gateelectrode has an inverted “T” shape.
 13. A three-dimensional (3D) memorydevice, comprising: a substrate; and a plurality of memory decks stackedabove the substrate, each of the memory decks comprising: a gateelectrode; a blocking layer on the gate electrode; a plurality of chargetrapping layers on the blocking layer, wherein the plurality of chargetrapping layers are discrete and disposed at different levels; atunneling layer on the plurality of charge trapping layers; a pluralityof channel layers on the tunneling layer, wherein the plurality ofchannel layers are discrete and disposed at different levels, and eachof the channel layers corresponds to a respective one of the chargetrapping layers; and an inter-deck dielectric layer on the plurality ofchannel layers, wherein a top surface of the inter-deck dielectric layerfits a top surface of the gate electrode, and the gate electrode ofanother one of the memory decks immediately above the memory deck isdisposed on the top surface of the inter-deck dielectric layer.
 14. The3D memory device of claim 13, wherein the gate electrode has an inverted“T” shape.
 15. The 3D memory device of claim 14, wherein the blockinglayer is continuous and disposed along at least a top surface of thegate electrode; and the tunneling layer is continuous and disposed alongat least top surfaces of each of the charge trapping layers.
 16. The 3Dmemory device of claim 14, wherein the plurality of charge trappinglayers comprise a first charge trapping layer, a second charge trappinglayer, and a third charge trapping layer; and the first charge trappinglayer is disposed laterally between the second and third charge trappinglayers.
 17. The 3D memory device of claim 16, wherein the second andthird charge trapping layers are disposed at a same level that is belowa level at which the first charge trapping layer is disposed.
 18. The 3Dmemory device of claim 16, wherein the second and third charge trappinglayers are disposed corresponding to two shoulders of the inverted “T”shape of the gate electrode, respectively; and the first charge trappinglayer is disposed corresponding to a head of the inverted “T” shape ofthe gate electrode.
 19. The 3D memory device of claim 17, wherein theplurality of channel layers comprise a first channel layer, a secondchannel layer, and a third channel layer; and the first channel layer isdisposed laterally between the second and third channel layers.
 20. The3D memory device of claim 19, wherein the second and third channellayers are disposed at a same level that is below a level at which thefirst channel layer is disposed.